A printable form of single crystal silicon for high performance thin film transistors on plastic

E. Menard; D. Y. Khang; K. Lee; R. Nuzzo; J. A. Rogers

doi:10.1109/DRC.2004.1367816

A printable form of single crystal silicon for high performance thin film transistors on plastic

E. Menard^*, D. Y. Khang, K. Lee, R. Nuzzo, J. A. Rogers

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The fabrication and electrical characteristics of high performance thin film transistors derived from printed and solution cast micro/nanoscale objects of single crystal silicon were discussed. These elements were fabricated from conventional bulk silicon substrates or from silicon-on-insulator wafers by patterning a layer of resist by soft lithography, anisotropically wet etching the exposed silicon and then lifting off the silicon. It was observed that the processing techniques enable extremely smooth, single crystal facets and uniform shapes. The results show that fabricating electrodes on top of these elements yield a type of thin film transistor that can have good electrical properties.

Original language	English (US)
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	127-128
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2004.1367816
State	Published - 2004
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: Jun 21 2004 → Jun 23 2004

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	Device Research Conference - Conference Digest, 62nd DRC
Country/Territory	United States
City	Notre Dame, IN
Period	6/21/04 → 6/23/04

ASJC Scopus subject areas

General Engineering

Access to Document

10.1109/DRC.2004.1367816

Cite this

@inproceedings{ef023957423f4f4fbbc420c5492a40a0,

title = "A printable form of single crystal silicon for high performance thin film transistors on plastic",

abstract = "The fabrication and electrical characteristics of high performance thin film transistors derived from printed and solution cast micro/nanoscale objects of single crystal silicon were discussed. These elements were fabricated from conventional bulk silicon substrates or from silicon-on-insulator wafers by patterning a layer of resist by soft lithography, anisotropically wet etching the exposed silicon and then lifting off the silicon. It was observed that the processing techniques enable extremely smooth, single crystal facets and uniform shapes. The results show that fabricating electrodes on top of these elements yield a type of thin film transistor that can have good electrical properties.",

author = "E. Menard and Khang, {D. Y.} and K. Lee and R. Nuzzo and Rogers, {J. A.}",

year = "2004",

doi = "10.1109/DRC.2004.1367816",

language = "English (US)",

isbn = "0780382846",

series = "Device Research Conference - Conference Digest, DRC",

pages = "127--128",

booktitle = "Device Research Conference - Conference Digest, 62nd DRC",

note = "Device Research Conference - Conference Digest, 62nd DRC ; Conference date: 21-06-2004 Through 23-06-2004",

}

Menard, E, Khang, DY, Lee, K, Nuzzo, R & Rogers, JA 2004, A printable form of single crystal silicon for high performance thin film transistors on plastic. in Device Research Conference - Conference Digest, 62nd DRC., III.-38, Device Research Conference - Conference Digest, DRC, pp. 127-128, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, 6/21/04. https://doi.org/10.1109/DRC.2004.1367816

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AU - Menard, E.

AU - Khang, D. Y.

AU - Lee, K.

AU - Nuzzo, R.

AU - Rogers, J. A.

PY - 2004

Y1 - 2004

N2 - The fabrication and electrical characteristics of high performance thin film transistors derived from printed and solution cast micro/nanoscale objects of single crystal silicon were discussed. These elements were fabricated from conventional bulk silicon substrates or from silicon-on-insulator wafers by patterning a layer of resist by soft lithography, anisotropically wet etching the exposed silicon and then lifting off the silicon. It was observed that the processing techniques enable extremely smooth, single crystal facets and uniform shapes. The results show that fabricating electrodes on top of these elements yield a type of thin film transistor that can have good electrical properties.

AB - The fabrication and electrical characteristics of high performance thin film transistors derived from printed and solution cast micro/nanoscale objects of single crystal silicon were discussed. These elements were fabricated from conventional bulk silicon substrates or from silicon-on-insulator wafers by patterning a layer of resist by soft lithography, anisotropically wet etching the exposed silicon and then lifting off the silicon. It was observed that the processing techniques enable extremely smooth, single crystal facets and uniform shapes. The results show that fabricating electrodes on top of these elements yield a type of thin film transistor that can have good electrical properties.

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T3 - Device Research Conference - Conference Digest, DRC

SP - 127

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BT - Device Research Conference - Conference Digest, 62nd DRC

T2 - Device Research Conference - Conference Digest, 62nd DRC

Y2 - 21 June 2004 through 23 June 2004

ER -

A printable form of single crystal silicon for high performance thin film transistors on plastic

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