A qubit device based on manipulations of Andreev bound states in double-barrier Josephson junctions

Serhii Shafranjuk; I. P. Nevirkovets; J. B. Ketterson

doi:10.1016/S0038-1098(02)00040-6

A qubit device based on manipulations of Andreev bound states in double-barrier Josephson junctions

Serhii Shafranjuk, I. P. Nevirkovets^*, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A qubit system exploiting manipulations of the Andreev bound state (ABS) levels in the SINIS junction by applying appropriate bias voltages and transport currents is suggested. The parameters of the SINIS setup may be chosen in such a way that only two ABS levels are present; this is in agreement with our experimental data obtained using Nb/Al double-barrier junctions. In the qubit Hamiltonian, H, the two ABS levels are presented as the '↑' and '↓' spin states, while the controlling physical parameters (voltage across one of the barriers and the transport current) are mapped to the 'magnetic fields' B_x ⁿ and B_z ⁿ. The phase decoherence time is estimated.

Original language	English (US)
Pages (from-to)	457-460
Number of pages	4
Journal	Solid State Communications
Volume	121
Issue number	9-10
DOIs	https://doi.org/10.1016/S0038-1098(02)00040-6
State	Published - Mar 7 2002

Keywords

A. Quantum wells
A. Superconductors
D. Tunneling

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(02)00040-6

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abstract = "A qubit system exploiting manipulations of the Andreev bound state (ABS) levels in the SINIS junction by applying appropriate bias voltages and transport currents is suggested. The parameters of the SINIS setup may be chosen in such a way that only two ABS levels are present; this is in agreement with our experimental data obtained using Nb/Al double-barrier junctions. In the qubit Hamiltonian, H, the two ABS levels are presented as the '↑' and '↓' spin states, while the controlling physical parameters (voltage across one of the barriers and the transport current) are mapped to the 'magnetic fields' Bx n and Bz n. The phase decoherence time is estimated.",

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AU - Ketterson, J. B.

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N2 - A qubit system exploiting manipulations of the Andreev bound state (ABS) levels in the SINIS junction by applying appropriate bias voltages and transport currents is suggested. The parameters of the SINIS setup may be chosen in such a way that only two ABS levels are present; this is in agreement with our experimental data obtained using Nb/Al double-barrier junctions. In the qubit Hamiltonian, H, the two ABS levels are presented as the '↑' and '↓' spin states, while the controlling physical parameters (voltage across one of the barriers and the transport current) are mapped to the 'magnetic fields' Bx n and Bz n. The phase decoherence time is estimated.

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