A qubit device based on manipulations of Andreev bound states in double-barrier Josephson junctions

Serhii Shafranjuk, I. P. Nevirkovets*, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A qubit system exploiting manipulations of the Andreev bound state (ABS) levels in the SINIS junction by applying appropriate bias voltages and transport currents is suggested. The parameters of the SINIS setup may be chosen in such a way that only two ABS levels are present; this is in agreement with our experimental data obtained using Nb/Al double-barrier junctions. In the qubit Hamiltonian, H, the two ABS levels are presented as the '↑' and '↓' spin states, while the controlling physical parameters (voltage across one of the barriers and the transport current) are mapped to the 'magnetic fields' Bx n and Bz n. The phase decoherence time is estimated.

Original languageEnglish (US)
Pages (from-to)457-460
Number of pages4
JournalSolid State Communications
Volume121
Issue number9-10
DOIs
StatePublished - Mar 7 2002

Keywords

  • A. Quantum wells
  • A. Superconductors
  • D. Tunneling

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'A qubit device based on manipulations of Andreev bound states in double-barrier Josephson junctions'. Together they form a unique fingerprint.

Cite this