A qubit device based on manipulations of Andreev bound states in double-barrier Josephson junctions

S. E. Shafranjuk; I. P. Nevirkovets; J. B. Ketterson

doi:10.1016/S0038-1098(02)00040-6

A qubit device based on manipulations of Andreev bound states in double-barrier Josephson junctions

S. E. Shafranjuk, I. P. Nevirkovets^*, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A qubit system exploiting manipulations of the Andreev bound state (ABS) levels in the SINIS junction by applying appropriate bias voltages and transport currents is suggested. The parameters of the SINIS setup may be chosen in such a way that only two ABS levels are present; this is in agreement with our experimental data obtained using Nb/Al double-barrier junctions. In the qubit Hamiltonian, H, the two ABS levels are presented as the '↑' and '↓' spin states, while the controlling physical parameters (voltage across one of the barriers and the transport current) are mapped to the 'magnetic fields' B_xⁿ and B_zⁿ. The phase decoherence time is estimated.

Original language	English (US)
Pages (from-to)	457-460
Number of pages	4
Journal	Solid State Communications
Volume	121
Issue number	9-10
DOIs	https://doi.org/10.1016/S0038-1098(02)00040-6
State	Published - Mar 7 2002

Keywords

A. Quantum wells
A. Superconductors
D. Tunneling

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(02)00040-6

Cite this

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title = "A qubit device based on manipulations of Andreev bound states in double-barrier Josephson junctions",

abstract = "A qubit system exploiting manipulations of the Andreev bound state (ABS) levels in the SINIS junction by applying appropriate bias voltages and transport currents is suggested. The parameters of the SINIS setup may be chosen in such a way that only two ABS levels are present; this is in agreement with our experimental data obtained using Nb/Al double-barrier junctions. In the qubit Hamiltonian, H, the two ABS levels are presented as the '↑' and '↓' spin states, while the controlling physical parameters (voltage across one of the barriers and the transport current) are mapped to the 'magnetic fields' Bxn and Bzn. The phase decoherence time is estimated.",

keywords = "A. Quantum wells, A. Superconductors, D. Tunneling",

author = "Shafranjuk, {S. E.} and Nevirkovets, {I. P.} and Ketterson, {J. B.}",

note = "Funding Information: This work was supported in part by the Office of Naval Research under grant N00014-00-1-0025. Use was made of facilities operated by the Northwestern Materials Research Center under the NSF MRSEC program, DMR9309061. ",

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T1 - A qubit device based on manipulations of Andreev bound states in double-barrier Josephson junctions

AU - Shafranjuk, S. E.

AU - Nevirkovets, I. P.

AU - Ketterson, J. B.

N1 - Funding Information: This work was supported in part by the Office of Naval Research under grant N00014-00-1-0025. Use was made of facilities operated by the Northwestern Materials Research Center under the NSF MRSEC program, DMR9309061.

PY - 2002/3/7

Y1 - 2002/3/7

N2 - A qubit system exploiting manipulations of the Andreev bound state (ABS) levels in the SINIS junction by applying appropriate bias voltages and transport currents is suggested. The parameters of the SINIS setup may be chosen in such a way that only two ABS levels are present; this is in agreement with our experimental data obtained using Nb/Al double-barrier junctions. In the qubit Hamiltonian, H, the two ABS levels are presented as the '↑' and '↓' spin states, while the controlling physical parameters (voltage across one of the barriers and the transport current) are mapped to the 'magnetic fields' Bxn and Bzn. The phase decoherence time is estimated.

AB - A qubit system exploiting manipulations of the Andreev bound state (ABS) levels in the SINIS junction by applying appropriate bias voltages and transport currents is suggested. The parameters of the SINIS setup may be chosen in such a way that only two ABS levels are present; this is in agreement with our experimental data obtained using Nb/Al double-barrier junctions. In the qubit Hamiltonian, H, the two ABS levels are presented as the '↑' and '↓' spin states, while the controlling physical parameters (voltage across one of the barriers and the transport current) are mapped to the 'magnetic fields' Bxn and Bzn. The phase decoherence time is estimated.

KW - A. Quantum wells

KW - A. Superconductors

KW - D. Tunneling

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EP - 460

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

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A qubit device based on manipulations of Andreev bound states in double-barrier Josephson junctions

Abstract

Keywords

ASJC Scopus subject areas

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