A ReRAM-based single-NVM nonvolatile flip-flop with reduced stress-time and write-power against wide distribution in write-time by using self-write-termination scheme for nonvolatile processors in IoT era

Chieh Pu Lo, Wei Hao Chen, Zhibo Wang, Albert Lee, Kuo Hsiang Hsu, Fang Su, Ya Chin King, Chrong Jung Lin, Yongpan Liu, Huazhong Yang, Pedram Khalili, Kang Lung Wang, Meng Fan Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

Recent nonvolatile flip-flops (nvFFs) enable the parallel movement of data locally between flip-flops (FFs) and nonvolatile memory (NVM) devices for faster system power off/on operations. The wide distribution and long period in NVM-write times of previous two-NVM-based nvFFs result in excessive store energy (Es) and over-write induced reliability degradation for NVM-write operations. This work proposes an nvFF using a single NVM (1R) with self-write-termination (SWT), capable of reducing ES by 27+x and avoid over-write operations. In fabricated 65nm ReRAM nvProcessor testchips, the proposed SWT1R nvFFs achieved off/on operations with a 99% reduction in Es and 2.7ns SWT latency (TSWT). For the first time, an nvFF with single NVM device is presented.

Original languageEnglish (US)
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages16.3.1-16.3.4
ISBN (Electronic)9781509039012
DOIs
StatePublished - Jan 31 2017
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: Dec 3 2016Dec 7 2016

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period12/3/1612/7/16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Lo, C. P., Chen, W. H., Wang, Z., Lee, A., Hsu, K. H., Su, F., King, Y. C., Lin, C. J., Liu, Y., Yang, H., Khalili, P., Wang, K. L., & Chang, M. F. (2017). A ReRAM-based single-NVM nonvolatile flip-flop with reduced stress-time and write-power against wide distribution in write-time by using self-write-termination scheme for nonvolatile processors in IoT era. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 16.3.1-16.3.4). [7838430] (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838430