A review of the growth, doping & applications of β-Ga2O3 thin films

Manijeh Razeghi; Ji Hyeon Park; Ryan McClintock; Dimitris Pavlidis; Ferechteh H. Teherani; David J. Rogers; Brenden A. Magill; Giti A. Khodaparast; Yaobin Xu; Jinsong Wu; Vinayak P. Dravid

doi:10.1117/12.2302471

A review of the growth, doping & applications of β-Ga₂O₃ thin films

Manijeh Razeghi^*, Ji Hyeon Park, Ryan McClintock, Dimitris Pavlidis, Ferechteh H. Teherani, David J. Rogers, Brenden A. Magill, Giti A. Khodaparast, Yaobin Xu, Jinsong Wu, Vinayak P. Dravid

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

56 Scopus citations

Abstract

β-Ga₂O₃ is emerging as an interesting wide band gap semiconductor for solar blind photo detectors (SBPD) and high power field effect transistors (FET) because of its outstanding material properties including an extremely wide bandgap (Eg ∼4.9eV) and a high breakdown field (8 MV/cm). This review summarizes recent trends and progress in the growth/doping of β-Ga₂O₃ thin films and then offers an overview of the state-of-the-art in SBPD and FET devices. The present challenges for β-Ga₂O₃ devices to penetrate the market in real-world applications are also considered, along with paths for future work.

Original language	English (US)
Title of host publication	Oxide-Based Materials and Devices IX
Editors	David J. Rogers, Ferechteh H. Teherani, David C. Look
Publisher	SPIE
ISBN (Electronic)	9781510615519
DOIs	https://doi.org/10.1117/12.2302471
State	Published - 2018
Event	Oxide-Based Materials and Devices IX 2018 - San Francisco, United States Duration: Jan 28 2018 → Feb 1 2018

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10533
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Oxide-Based Materials and Devices IX 2018
Country/Territory	United States
City	San Francisco
Period	1/28/18 → 2/1/18

Keywords

Solar blind photo detectors
Thin films
β-GaO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2302471

Cite this

Razeghi, M., Park, J. H., McClintock, R., Pavlidis, D., Teherani, F. H., Rogers, D. J., Magill, B. A., Khodaparast, G. A., Xu, Y., Wu, J., & Dravid, V. P. (2018). A review of the growth, doping & applications of β-Ga₂O₃ thin films. In D. J. Rogers, F. H. Teherani, & D. C. Look (Eds.), Oxide-Based Materials and Devices IX Article 105330R (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10533). SPIE. https://doi.org/10.1117/12.2302471

@inproceedings{6352a669bb2047c9baeb9cbea3dd8f09,

title = "A review of the growth, doping & applications of β-Ga2O3 thin films",

abstract = "β-Ga2O3 is emerging as an interesting wide band gap semiconductor for solar blind photo detectors (SBPD) and high power field effect transistors (FET) because of its outstanding material properties including an extremely wide bandgap (Eg ∼4.9eV) and a high breakdown field (8 MV/cm). This review summarizes recent trends and progress in the growth/doping of β-Ga2O3 thin films and then offers an overview of the state-of-the-art in SBPD and FET devices. The present challenges for β-Ga2O3 devices to penetrate the market in real-world applications are also considered, along with paths for future work.",

keywords = "Solar blind photo detectors, Thin films, β-GaO",

author = "Manijeh Razeghi and Park, {Ji Hyeon} and Ryan McClintock and Dimitris Pavlidis and Teherani, {Ferechteh H.} and Rogers, {David J.} and Magill, {Brenden A.} and Khodaparast, {Giti A.} and Yaobin Xu and Jinsong Wu and Dravid, {Vinayak P.}",

note = "Funding Information: This material is based upon work supported by the National Science Foundation under Grant No. ECCS-1748339 Publisher Copyright: {\textcopyright} Copyright 2018 SPIE.; Oxide-Based Materials and Devices IX 2018 ; Conference date: 28-01-2018 Through 01-02-2018",

year = "2018",

doi = "10.1117/12.2302471",

language = "English (US)",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Rogers, {David J.} and Teherani, {Ferechteh H.} and Look, {David C.}",

booktitle = "Oxide-Based Materials and Devices IX",

}

Razeghi, M, Park, JH, McClintock, R, Pavlidis, D, Teherani, FH, Rogers, DJ, Magill, BA, Khodaparast, GA, Xu, Y, Wu, J & Dravid, VP 2018, A review of the growth, doping & applications of β-Ga₂O₃ thin films. in DJ Rogers, FH Teherani & DC Look (eds), Oxide-Based Materials and Devices IX., 105330R, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10533, SPIE, Oxide-Based Materials and Devices IX 2018, San Francisco, United States, 1/28/18. https://doi.org/10.1117/12.2302471

A review of the growth, doping & applications of β-Ga₂O₃ thin films. / Razeghi, Manijeh; Park, Ji Hyeon; McClintock, Ryan et al.
Oxide-Based Materials and Devices IX. ed. / David J. Rogers; Ferechteh H. Teherani; David C. Look. SPIE, 2018. 105330R (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10533).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A review of the growth, doping & applications of β-Ga2O3 thin films

AU - Razeghi, Manijeh

AU - Park, Ji Hyeon

AU - McClintock, Ryan

AU - Pavlidis, Dimitris

AU - Teherani, Ferechteh H.

AU - Rogers, David J.

AU - Magill, Brenden A.

AU - Khodaparast, Giti A.

AU - Xu, Yaobin

AU - Wu, Jinsong

AU - Dravid, Vinayak P.

PY - 2018

Y1 - 2018

N2 - β-Ga2O3 is emerging as an interesting wide band gap semiconductor for solar blind photo detectors (SBPD) and high power field effect transistors (FET) because of its outstanding material properties including an extremely wide bandgap (Eg ∼4.9eV) and a high breakdown field (8 MV/cm). This review summarizes recent trends and progress in the growth/doping of β-Ga2O3 thin films and then offers an overview of the state-of-the-art in SBPD and FET devices. The present challenges for β-Ga2O3 devices to penetrate the market in real-world applications are also considered, along with paths for future work.

AB - β-Ga2O3 is emerging as an interesting wide band gap semiconductor for solar blind photo detectors (SBPD) and high power field effect transistors (FET) because of its outstanding material properties including an extremely wide bandgap (Eg ∼4.9eV) and a high breakdown field (8 MV/cm). This review summarizes recent trends and progress in the growth/doping of β-Ga2O3 thin films and then offers an overview of the state-of-the-art in SBPD and FET devices. The present challenges for β-Ga2O3 devices to penetrate the market in real-world applications are also considered, along with paths for future work.

KW - Solar blind photo detectors

KW - Thin films

KW - β-GaO

UR - http://www.scopus.com/inward/record.url?scp=85047435581&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047435581&partnerID=8YFLogxK

U2 - 10.1117/12.2302471

DO - 10.1117/12.2302471

M3 - Conference contribution

AN - SCOPUS:85047435581

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-Based Materials and Devices IX

A2 - Rogers, David J.

A2 - Teherani, Ferechteh H.

A2 - Look, David C.

PB - SPIE

T2 - Oxide-Based Materials and Devices IX 2018

Y2 - 28 January 2018 through 1 February 2018

ER -