A review of the growth, doping & applications of β-Ga 2 O 3 thin films

Manijeh Razeghi*, Ji Hyeon Park, Ryan P McClintock, Dimitris Pavlidis, Ferechteh H. Teherani, David J. Rogers, Brenden A. Magill, Giti A. Khodaparast, Yaobin Xu, Jinsong Wu, Vinayak P Dravid

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

β-Ga 2 O 3 is emerging as an interesting wide band gap semiconductor for solar blind photo detectors (SBPD) and high power field effect transistors (FET) because of its outstanding material properties including an extremely wide bandgap (Eg ∼4.9eV) and a high breakdown field (8 MV/cm). This review summarizes recent trends and progress in the growth/doping of β-Ga 2 O 3 thin films and then offers an overview of the state-of-the-art in SBPD and FET devices. The present challenges for β-Ga 2 O 3 devices to penetrate the market in real-world applications are also considered, along with paths for future work.

Original languageEnglish (US)
Title of host publicationOxide-Based Materials and Devices IX
EditorsDavid J. Rogers, Ferechteh H. Teherani, David C. Look
PublisherSPIE
ISBN (Electronic)9781510615519
DOIs
StatePublished - Jan 1 2018
EventOxide-Based Materials and Devices IX 2018 - San Francisco, United States
Duration: Jan 28 2018Feb 1 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10533
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherOxide-Based Materials and Devices IX 2018
CountryUnited States
CitySan Francisco
Period1/28/182/1/18

Fingerprint

Field-effect Transistor
Photodetector
Thin Films
field effect transistors
Doping (additives)
Detectors
Thin films
detectors
Band Gap
thin films
Field effect transistors
Real-world Applications
Material Properties
High Power
Breakdown
Semiconductors
emerging
Materials properties
Energy gap
breakdown

Keywords

  • Solar blind photo detectors
  • Thin films
  • β-Ga O

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Razeghi, M., Park, J. H., McClintock, R. P., Pavlidis, D., Teherani, F. H., Rogers, D. J., ... Dravid, V. P. (2018). A review of the growth, doping & applications of β-Ga 2 O 3 thin films In D. J. Rogers, F. H. Teherani, & D. C. Look (Eds.), Oxide-Based Materials and Devices IX [105330R] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10533). SPIE. https://doi.org/10.1117/12.2302471
Razeghi, Manijeh ; Park, Ji Hyeon ; McClintock, Ryan P ; Pavlidis, Dimitris ; Teherani, Ferechteh H. ; Rogers, David J. ; Magill, Brenden A. ; Khodaparast, Giti A. ; Xu, Yaobin ; Wu, Jinsong ; Dravid, Vinayak P. / A review of the growth, doping & applications of β-Ga 2 O 3 thin films Oxide-Based Materials and Devices IX. editor / David J. Rogers ; Ferechteh H. Teherani ; David C. Look. SPIE, 2018. (Proceedings of SPIE - The International Society for Optical Engineering).
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Razeghi, M, Park, JH, McClintock, RP, Pavlidis, D, Teherani, FH, Rogers, DJ, Magill, BA, Khodaparast, GA, Xu, Y, Wu, J & Dravid, VP 2018, A review of the growth, doping & applications of β-Ga 2 O 3 thin films in DJ Rogers, FH Teherani & DC Look (eds), Oxide-Based Materials and Devices IX., 105330R, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10533, SPIE, Oxide-Based Materials and Devices IX 2018, San Francisco, United States, 1/28/18. https://doi.org/10.1117/12.2302471

A review of the growth, doping & applications of β-Ga 2 O 3 thin films . / Razeghi, Manijeh; Park, Ji Hyeon; McClintock, Ryan P; Pavlidis, Dimitris; Teherani, Ferechteh H.; Rogers, David J.; Magill, Brenden A.; Khodaparast, Giti A.; Xu, Yaobin; Wu, Jinsong; Dravid, Vinayak P.

Oxide-Based Materials and Devices IX. ed. / David J. Rogers; Ferechteh H. Teherani; David C. Look. SPIE, 2018. 105330R (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10533).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Rogers, David J.

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AB - β-Ga 2 O 3 is emerging as an interesting wide band gap semiconductor for solar blind photo detectors (SBPD) and high power field effect transistors (FET) because of its outstanding material properties including an extremely wide bandgap (Eg ∼4.9eV) and a high breakdown field (8 MV/cm). This review summarizes recent trends and progress in the growth/doping of β-Ga 2 O 3 thin films and then offers an overview of the state-of-the-art in SBPD and FET devices. The present challenges for β-Ga 2 O 3 devices to penetrate the market in real-world applications are also considered, along with paths for future work.

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Razeghi M, Park JH, McClintock RP, Pavlidis D, Teherani FH, Rogers DJ et al. A review of the growth, doping & applications of β-Ga 2 O 3 thin films In Rogers DJ, Teherani FH, Look DC, editors, Oxide-Based Materials and Devices IX. SPIE. 2018. 105330R. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2302471