A review of the growth, doping & applications of β-Ga2O3 thin films

Manijeh Razeghi*, Ji Hyeon Park, Ryan McClintock, Dimitris Pavlidis, Ferechteh H. Teherani, David J. Rogers, Brenden A. Magill, Giti A. Khodaparast, Yaobin Xu, Jinsong Wu, Vinayak P. Dravid

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

26 Scopus citations

Abstract

β-Ga2O3 is emerging as an interesting wide band gap semiconductor for solar blind photo detectors (SBPD) and high power field effect transistors (FET) because of its outstanding material properties including an extremely wide bandgap (Eg ∼4.9eV) and a high breakdown field (8 MV/cm). This review summarizes recent trends and progress in the growth/doping of β-Ga2O3 thin films and then offers an overview of the state-of-the-art in SBPD and FET devices. The present challenges for β-Ga2O3 devices to penetrate the market in real-world applications are also considered, along with paths for future work.

Original languageEnglish (US)
Title of host publicationOxide-Based Materials and Devices IX
EditorsDavid J. Rogers, Ferechteh H. Teherani, David C. Look
PublisherSPIE
ISBN (Electronic)9781510615519
DOIs
StatePublished - 2018
EventOxide-Based Materials and Devices IX 2018 - San Francisco, United States
Duration: Jan 28 2018Feb 1 2018

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10533
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherOxide-Based Materials and Devices IX 2018
Country/TerritoryUnited States
CitySan Francisco
Period1/28/182/1/18

Keywords

  • Solar blind photo detectors
  • Thin films
  • β-GaO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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