A stress-induced diffusion model for failure of interconnects in microelectronic devices

Keyphrases

• Microelectronics 100%
• Diffusion Model 100%
• Isothermal Aging 100%
• Stress-assisted Diffusion 100%
• Failure Rate 66%
• Failure Model 66%
• Thermal Fatigue 66%
• Thermal Fatigue Test 66%
• Accelerated Testing 33%
• Time-frequency 33%
• Fracture Mechanics 33%
• Passivation 33%
• Al-Zn-Mg-Cu 33%
• Failure Mechanism 33%
• Aging Temperature 33%
• Diffusion Theory 33%
• Holding Time 33%
• Cu Interconnect 33%
• Normal Operating Conditions 33%
• Electric Current Flow 33%
• Interlayer Dielectric 33%
• Dielectric Stress 33%
• Line Thickness 33%
• Open-circuit Failure 33%

Engineering

• Induced Stress 100%
• Microelectronics 100%
• Diffusion Model 100%
• Interconnects 100%
• Thermal Fatigue 80%
• Isothermal 60%
• Mechanical Fatigue Test 40%
• Failure Model 40%
• Failure Rate 40%
• Current Flow 20%
• Open Circuit 20%
• Predicted Result 20%
• Passivation 20%
• Normal Operating Condition 20%
• Aging Temperature 20%
• Dielectrics 20%
• Accelerated Test 20%
• Hold Time 20%
• Interlayer 20%
• Failure Mechanism 20%
• Diffusion Theory 20%
• Fracture Mechanics 20%