A Structural Investigation of Ga3-xIn5+xSn2O16

D. D. Edwards*, T. O. Mason, W. Sinkler, L. D. Marks, F. Goutenoire, K. R. Poeppelmeier

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

The structure of the recently reported transparent conductor, Ga3-xIn5+xSn2O16(0.3<x<1.6), was established by a combination of high-resolution electron microscopy, convergent-beam electron diffraction, and Rietveld analysis of powder diffraction data (X-ray and time-of-flight neutron methods). This "T-phase" compound has an anion-deficient fluorite-derivative structure whose space group isI41/a. Although there are similarities to the parent oxide structures, the T-phase lacks one of the distorted InO6octahedra observed in In2O3, which may account for its inability to be donor-doped by Sn.

Original languageEnglish (US)
Pages (from-to)242-250
Number of pages9
JournalJournal of Solid State Chemistry
Volume140
Issue number2
DOIs
StatePublished - Nov 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry
  • Materials Chemistry

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