A study of n-type GaxIn1-xAsyP 1-y-InP quantum wells

J. C. Portal*, R. J. Nicholas, M. A. Brummell, L. C. Brunel, S. Huant, M. Razeghi, M. Laviron

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The properties of GaInAsP-InP single- and multiple-quantum-well structures have been studied using the Shubnikov-de Haas effect and cyclotron and magnetophonon resonance techniques. The effective mass of the two-dimensional electrons has been measured and the two-dimensional carrier concentrations determined. There is evidence for the formation of a 'depleted superlattice' in the multiple-quantum-well structures, in which most or all of the electrons accumulate at a single interface.

Original languageEnglish (US)
Article number001
Pages (from-to)3-6
Number of pages4
JournalSemiconductor Science and Technology
Volume1
Issue number1
DOIs
StatePublished - Dec 1 1986

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Portal, J. C., Nicholas, R. J., Brummell, M. A., Brunel, L. C., Huant, S., Razeghi, M., & Laviron, M. (1986). A study of n-type GaxIn1-xAsyP 1-y-InP quantum wells. Semiconductor Science and Technology, 1(1), 3-6. [001]. https://doi.org/10.1088/0268-1242/1/1/001