Abstract
The properties of GaInAsP-InP single- and multiple-quantum-well structures have been studied using the Shubnikov-de Haas effect and cyclotron and magnetophonon resonance techniques. The effective mass of the two-dimensional electrons has been measured and the two-dimensional carrier concentrations determined. There is evidence for the formation of a 'depleted superlattice' in the multiple-quantum-well structures, in which most or all of the electrons accumulate at a single interface.
Original language | English (US) |
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Article number | 001 |
Pages (from-to) | 3-6 |
Number of pages | 4 |
Journal | Semiconductor Science and Technology |
Volume | 1 |
Issue number | 1 |
DOIs | |
State | Published - 1986 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry