The properties of GaInAsP-InP single- and multiple-quantum-well structures have been studied using the Shubnikov-de Haas effect and cyclotron and magnetophonon resonance techniques. The effective mass of the two-dimensional electrons has been measured and the two-dimensional carrier concentrations determined. There is evidence for the formation of a 'depleted superlattice' in the multiple-quantum-well structures, in which most or all of the electrons accumulate at a single interface.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry