A study of n-type GaxIn1-xAsyP 1-y-InP quantum wells

J. C. Portal; R. J. Nicholas; M. A. Brummell; L. C. Brunel; S. Huant; M. Razeghi; M. Laviron

doi:10.1088/0268-1242/1/1/001

A study of n-type Ga_xIn_1-xAs_yP _1-y-InP quantum wells

J. C. Portal^*, R. J. Nicholas, M. A. Brummell, L. C. Brunel, S. Huant, M. Razeghi, M. Laviron

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The properties of GaInAsP-InP single- and multiple-quantum-well structures have been studied using the Shubnikov-de Haas effect and cyclotron and magnetophonon resonance techniques. The effective mass of the two-dimensional electrons has been measured and the two-dimensional carrier concentrations determined. There is evidence for the formation of a 'depleted superlattice' in the multiple-quantum-well structures, in which most or all of the electrons accumulate at a single interface.

Original language	English (US)
Article number	001
Pages (from-to)	3-6
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	1
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/1/1/001
State	Published - 1986

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/1/1/001

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abstract = "The properties of GaInAsP-InP single- and multiple-quantum-well structures have been studied using the Shubnikov-de Haas effect and cyclotron and magnetophonon resonance techniques. The effective mass of the two-dimensional electrons has been measured and the two-dimensional carrier concentrations determined. There is evidence for the formation of a 'depleted superlattice' in the multiple-quantum-well structures, in which most or all of the electrons accumulate at a single interface.",

author = "Portal, \{J. C.\} and Nicholas, \{R. J.\} and Brummell, \{M. A.\} and Brunel, \{L. C.\} and S. Huant and M. Razeghi and M. Laviron",

year = "1986",

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T1 - A study of n-type GaxIn1-xAsyP 1-y-InP quantum wells

AU - Portal, J. C.

AU - Nicholas, R. J.

AU - Brummell, M. A.

AU - Brunel, L. C.

AU - Huant, S.

AU - Razeghi, M.

AU - Laviron, M.

PY - 1986

Y1 - 1986

N2 - The properties of GaInAsP-InP single- and multiple-quantum-well structures have been studied using the Shubnikov-de Haas effect and cyclotron and magnetophonon resonance techniques. The effective mass of the two-dimensional electrons has been measured and the two-dimensional carrier concentrations determined. There is evidence for the formation of a 'depleted superlattice' in the multiple-quantum-well structures, in which most or all of the electrons accumulate at a single interface.

AB - The properties of GaInAsP-InP single- and multiple-quantum-well structures have been studied using the Shubnikov-de Haas effect and cyclotron and magnetophonon resonance techniques. The effective mass of the two-dimensional electrons has been measured and the two-dimensional carrier concentrations determined. There is evidence for the formation of a 'depleted superlattice' in the multiple-quantum-well structures, in which most or all of the electrons accumulate at a single interface.

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ER -

A study of n-type Ga_xIn_1-xAs_yP _1-y-InP quantum wells

Abstract

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