A study of the composition of the {111} planes of GaP on an atomic scale

Masahiko Yamamoto*, David N. Seidman, Shogo Nakamura

*Corresponding author for this work

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

Atom-probe field-ion microscope (FIM) analyses were performed on specimens of the compound semiconductor GaP. A set of experimental conditions was found which allows the study of GaP employing the straight time-of-flight atom probe. The purposes of the investigation were to show the step-like field-evaporation behavior - corresponding to each atomic layer of the {111} planes - and to determine the composition of each plane of atoms. This type of information is based on the periodicity of the GaP crystal (zinc blende structure) and is of potential value for the study of a wide range of physical problems involving compound semiconductors. Our studies showed that the composition of each {111} plane can indeed be determined. The overall stoichiometry of the GaP was found to be related to the background gas hydrogen and the number of ions field evaporated per pulse. The observations are explained in terms of possible fieldevaporation mechanisms involving the main background gas in the FIM - hydrogen.

Original languageEnglish (US)
Pages (from-to)555-571
Number of pages17
JournalSurface Science
Volume118
Issue number3
DOIs
StatePublished - Jun 2 1982

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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