A superconducting transistor with improved isolation between the input and output terminals

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

A new design for a multi-terminal superconducting transistor-like device exploiting tunnelling injection of quasiparticles is proposed, in which parasitic back-action of the acceptor junction (S1IS2) bias current on the injector junction (S2FIS3) current-voltage characteristic(CVC) is dramatically reduced as compared with that for the formerly reported quiteron (here S, I, and F denote a superconductor, an insulator and a ferromagnetic material). Improvement of the isolation is achieved owing to the short electron mean free path and short coherence length in a thin F layer that screens the superconducting energy gap in the perturbed S2 layer preventing its manifestation in the CVC of the injector.

Original languageEnglish (US)
Article number105009
JournalSuperconductor Science and Technology
Volume22
Issue number10
DOIs
StatePublished - Nov 9 2009

ASJC Scopus subject areas

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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