Abstract
A new design for a multi-terminal superconducting transistor-like device exploiting tunnelling injection of quasiparticles is proposed, in which parasitic back-action of the acceptor junction (S1IS2) bias current on the injector junction (S2FIS3) current-voltage characteristic(CVC) is dramatically reduced as compared with that for the formerly reported quiteron (here S, I, and F denote a superconductor, an insulator and a ferromagnetic material). Improvement of the isolation is achieved owing to the short electron mean free path and short coherence length in a thin F layer that screens the superconducting energy gap in the perturbed S2 layer preventing its manifestation in the CVC of the injector.
Original language | English (US) |
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Article number | 105009 |
Journal | Superconductor Science and Technology |
Volume | 22 |
Issue number | 10 |
DOIs | |
State | Published - Nov 9 2009 |
ASJC Scopus subject areas
- Ceramics and Composites
- Condensed Matter Physics
- Metals and Alloys
- Electrical and Electronic Engineering
- Materials Chemistry