A superconducting transistorlike device having good input-output isolation

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12 Scopus citations

Abstract

A multiterminal superconducting device with the S1 I S 2FIS3 structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material) is fabricated and characterized. Introducing a thin ferromagnetic layer into the middle electrode dramatically reduces parasitic back action of the acceptor junction (S 1 I S2) bias current on the injector junction (S 2 FI S3) current-voltage characteristic as compared with that for the formerly reported quiteron, a device exploiting similar operation principle.

Original languageEnglish (US)
Article number052505
JournalApplied Physics Letters
Volume95
Issue number5
DOIs
StatePublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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