A superconducting transistorlike device having good input-output isolation

I. P. Nevirkovets

doi:10.1063/1.3189283

A superconducting transistorlike device having good input-output isolation

I. P. Nevirkovets

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A multiterminal superconducting device with the S₁ I S ₂FIS₃ structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material) is fabricated and characterized. Introducing a thin ferromagnetic layer into the middle electrode dramatically reduces parasitic back action of the acceptor junction (S ₁ I S₂) bias current on the injector junction (S ₂ FI S₃) current-voltage characteristic as compared with that for the formerly reported quiteron, a device exploiting similar operation principle.

Original language	English (US)
Article number	052505
Journal	Applied Physics Letters
Volume	95
Issue number	5
DOIs	https://doi.org/10.1063/1.3189283
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3189283

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title = "A superconducting transistorlike device having good input-output isolation",

abstract = "A multiterminal superconducting device with the S1 I S 2FIS3 structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material) is fabricated and characterized. Introducing a thin ferromagnetic layer into the middle electrode dramatically reduces parasitic back action of the acceptor junction (S 1 I S2) bias current on the injector junction (S 2 FI S3) current-voltage characteristic as compared with that for the formerly reported quiteron, a device exploiting similar operation principle.",

author = "Nevirkovets, {I. P.}",

note = "Funding Information: The author acknowledges using data acquisition software provided by E. Goldobin, technical assistance rendered by O. Chernyashevskyy, and use supervised by J. B. Ketterson facilities of the Materials Research Center, Northwestern University, supported by the NSF. ",

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doi = "10.1063/1.3189283",

language = "English (US)",

volume = "95",

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T1 - A superconducting transistorlike device having good input-output isolation

AU - Nevirkovets, I. P.

N1 - Funding Information: The author acknowledges using data acquisition software provided by E. Goldobin, technical assistance rendered by O. Chernyashevskyy, and use supervised by J. B. Ketterson facilities of the Materials Research Center, Northwestern University, supported by the NSF.

PY - 2009

Y1 - 2009

N2 - A multiterminal superconducting device with the S1 I S 2FIS3 structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material) is fabricated and characterized. Introducing a thin ferromagnetic layer into the middle electrode dramatically reduces parasitic back action of the acceptor junction (S 1 I S2) bias current on the injector junction (S 2 FI S3) current-voltage characteristic as compared with that for the formerly reported quiteron, a device exploiting similar operation principle.

AB - A multiterminal superconducting device with the S1 I S 2FIS3 structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material) is fabricated and characterized. Introducing a thin ferromagnetic layer into the middle electrode dramatically reduces parasitic back action of the acceptor junction (S 1 I S2) bias current on the injector junction (S 2 FI S3) current-voltage characteristic as compared with that for the formerly reported quiteron, a device exploiting similar operation principle.

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DO - 10.1063/1.3189283

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 052505

ER -

A superconducting transistorlike device having good input-output isolation

Abstract

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