A theoretical and experimental study of the electronic transport properties of the compounds Cu2MTe3 (M =Ti, Zr, Hf)

John F. Mitchell*, Jeremy K. Burdett, Patricia M. Keane, James A. Ibers, Donald C. Degroot, Tim P. Hogan, Jon L. Schindler, Carl R. Kannewurf

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

A theoretical model that involves metal nonstoichiometry is proposed to explain the unexpected electronic conductivities in the close-packed ternary tellurides Cu2MTe3 (M =Ti, Zr, Hf). Conductivity, thermoelectric power, and Hall effect measurements indicate that these compounds are hole carriers with a concentration of the order of 5 × 1019 cm-3 for M =Zr at 300 K. Such a concentration corresponds to roughly 0.4% Cu vacancies or 0.2% Zr vacancies, levels below the detection limit by X-ray diffraction methods of the corresponding elements in theM =Hf compound.

Original languageEnglish (US)
Pages (from-to)103-109
Number of pages7
JournalJournal of Solid State Chemistry
Volume99
Issue number1
DOIs
StatePublished - Jul 1992

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry
  • Materials Chemistry

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