A tunable colloidal quantum dot photo field-effect transistor

Subir Ghosh; Sjoerd Hoogland; Vlad Sukhovatkin; Larissa Levina; Edward H. Sargent

doi:10.1063/1.3636438

A tunable colloidal quantum dot photo field-effect transistor

Subir Ghosh, Sjoerd Hoogland, Vlad Sukhovatkin, Larissa Levina, Edward H. Sargent^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We fabricate and investigate field-effect transistors in which a light-absorbing photogate modulates the flow of current along the channel. The photogate consists of colloidal quantum dots that efficiently transfer photoelectrons to the channel across a charge-separating (type-II) heterointerface, producing a primary and sustained secondary flow that is terminated via electron back-recombination across the interface. We explore colloidal quantum dot sizes corresponding to bandgaps ranging from 730 to 1475 nm and also investigate various stoichiometries of aluminum-doped ZnO (AZO) channel materials. We investigate the role of trap state energies in both the colloidal quantum dot energy film and the AZO channel.

Original language	English (US)
Article number	101102
Journal	Applied Physics Letters
Volume	99
Issue number	10
DOIs	https://doi.org/10.1063/1.3636438
State	Published - Sep 5 2011

Funding

This publication is based in part on work supported by an award (No. KUS-11-009-21) made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellent Program, by the Natural Sciences and Engineering Research Council (NSERC) of Canada, Angstrom Engineering and Innovative Technology. We acknowledge the assistance of Dr. Ratan Debnath and Dr. Xihua Wang.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3636438

Cite this

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abstract = "We fabricate and investigate field-effect transistors in which a light-absorbing photogate modulates the flow of current along the channel. The photogate consists of colloidal quantum dots that efficiently transfer photoelectrons to the channel across a charge-separating (type-II) heterointerface, producing a primary and sustained secondary flow that is terminated via electron back-recombination across the interface. We explore colloidal quantum dot sizes corresponding to bandgaps ranging from 730 to 1475 nm and also investigate various stoichiometries of aluminum-doped ZnO (AZO) channel materials. We investigate the role of trap state energies in both the colloidal quantum dot energy film and the AZO channel.",

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AU - Sargent, Edward H.

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A tunable colloidal quantum dot photo field-effect transistor

Abstract

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ASJC Scopus subject areas

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