Above-threshold leakage in semiconductor lasers: An analytical physical model

Igor M.P. Aarts, Edward H. Sargent

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


We present an analytical physical model for above-threshold leakage in semiconductor lasers. The model can be applied to estimate whether heterobarrier lowering and accompanying overbarrier leakage are within reach of having serious deleterious effects on laser performance. The model uses two-dimensional fully self-consistent numerical equations that arise from comprehensive systems of partial coupled differential equations. The effect of temperature and doping on laser efficiency is analyzed for two lasers, one designed for operation at 1.3 μm and the other at 1.55 μm. Both devices are assumed to be built in the InGaAsP-InP material system. We show that, even in a 1.55-μm laser, overbarrier leakage can cause severe performance degradation at typical operating temperatures and doping levels, and we argue that overbarrier leakage deserves to be treated as a potential threat to laser performance at telecommunication wavelengths.

Original languageEnglish (US)
Pages (from-to)496-501
Number of pages6
JournalIEEE Journal of Quantum Electronics
Issue number4
StatePublished - Apr 2000

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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