The lateral conductivity of the middle Al layer of a Nb Al Al Ox Al Al Ox Al Nb (SINIS) multiterminal device is studied as a function of the current injected perpendicular to the layers in a regime where a gap-difference-like feature is observed in the current-voltage characteristic. The response of the Al layer does not confirm an earlier reported observation of superconductivity in the Al far above its transition temperature.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jun 30 2006|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics