Abstract
The lateral conductivity of the middle Al layer of a Nb Al Al Ox Al Al Ox Al Nb (SINIS) multiterminal device is studied as a function of the current injected perpendicular to the layers in a regime where a gap-difference-like feature is observed in the current-voltage characteristic. The response of the Al layer does not confirm an earlier reported observation of superconductivity in the Al far above its transition temperature.
Original language | English (US) |
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Article number | 224521 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 73 |
Issue number | 22 |
DOIs | |
State | Published - Jun 30 2006 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics