Abstract
A method consistent with the Gibbs' formalism is presented for measuring the Gibbsian interfacial excess of solute (Γ) at an internal interface using atom-probe field-ion microscopy (APFIM). The values of Γ are measured directly, that is, without deconvolution procedures. The relationships between Γ and the thermodynamic-state variables of an internal interface are studied using the techniques of APFIM and transmission electron microscopy (TEM). Examples are given of the application of APFIM-TEM to the measurement of Γ at grain boundaries in an Fe(Si) alloy.
Original language | English (US) |
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Pages (from-to) | 6724-6727 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 48 |
Issue number | 9 |
DOIs | |
State | Published - 1993 |
ASJC Scopus subject areas
- Condensed Matter Physics