Absolute atomic scale measurements of the Gibbsian interfacial excess of solute at grain boundaries in an iron (silicon) alloy

B. W. Krakauer*, D. N. Seidman

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

The Gibbsian interfacial excess of Si (Γsi) is measured at high-angle tilt grain boundaries (GBs) and high-angle twist GBs of an Fe(Si) alloy equilibrated at 823 K; for each GB, transmission electron microscopy is used to determine precisely its five macroscopic geometric degrees of freedom. The value Γsi is ≈ 0.182×1014 atoms cm-2 at the high-angle tilt and twist GBs respectively.

Original languageEnglish (US)
Pages (from-to)393-396
Number of pages4
JournalMaterials Science Forum
Volume155-5
DOIs
StatePublished - 1994
EventProceedings of the International Meeting on Reactive Phase Formation at Interfaces and Diffusion Processes - Aussois, Fr
Duration: May 21 1993May 28 1993

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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