Absolute atomic scale measurements of the Gibbsian interfacial excess of solute at grain boundaries in an iron (silicon) alloy

B. W. Krakauer*, David N Seidman

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The Gibbsian interfacial excess of Si (Γsi) is measured at high-angle tilt grain boundaries (GBs) and high-angle twist GBs of an Fe(Si) alloy equilibrated at 823 K; for each GB, transmission electron microscopy is used to determine precisely its five macroscopic geometric degrees of freedom. The value Γsi is ≈ 0.182×1014 atoms cm-2 at the high-angle tilt and twist GBs respectively.

Original languageEnglish (US)
Pages (from-to)393-396
Number of pages4
JournalMaterials Science Forum
Volume155-5
StatePublished - Dec 1 1994

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Silicon alloys
silicon alloys
iron alloys
Iron alloys
solutes
Grain boundaries
grain boundaries
degrees of freedom
Transmission electron microscopy
Atoms
transmission electron microscopy
atoms

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

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abstract = "The Gibbsian interfacial excess of Si (Γsi) is measured at high-angle tilt grain boundaries (GBs) and high-angle twist GBs of an Fe(Si) alloy equilibrated at 823 K; for each GB, transmission electron microscopy is used to determine precisely its five macroscopic geometric degrees of freedom. The value Γsi is ≈ 0.182×1014 atoms cm-2 at the high-angle tilt and twist GBs respectively.",
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Absolute atomic scale measurements of the Gibbsian interfacial excess of solute at grain boundaries in an iron (silicon) alloy. / Krakauer, B. W.; Seidman, David N.

In: Materials Science Forum, Vol. 155-5, 01.12.1994, p. 393-396.

Research output: Contribution to journalArticle

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AU - Seidman, David N

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Y1 - 1994/12/1

N2 - The Gibbsian interfacial excess of Si (Γsi) is measured at high-angle tilt grain boundaries (GBs) and high-angle twist GBs of an Fe(Si) alloy equilibrated at 823 K; for each GB, transmission electron microscopy is used to determine precisely its five macroscopic geometric degrees of freedom. The value Γsi is ≈ 0.182×1014 atoms cm-2 at the high-angle tilt and twist GBs respectively.

AB - The Gibbsian interfacial excess of Si (Γsi) is measured at high-angle tilt grain boundaries (GBs) and high-angle twist GBs of an Fe(Si) alloy equilibrated at 823 K; for each GB, transmission electron microscopy is used to determine precisely its five macroscopic geometric degrees of freedom. The value Γsi is ≈ 0.182×1014 atoms cm-2 at the high-angle tilt and twist GBs respectively.

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