The Gibbsian interfacial excess of Si (Γsi) is measured at high-angle tilt grain boundaries (GBs) and high-angle twist GBs of an Fe(Si) alloy equilibrated at 823 K; for each GB, transmission electron microscopy is used to determine precisely its five macroscopic geometric degrees of freedom. The value Γsi is ≈ 0.182×1014 atoms cm-2 at the high-angle tilt and twist GBs respectively.
|Original language||English (US)|
|Number of pages||4|
|Journal||Materials Science Forum|
|State||Published - Dec 1 1994|
ASJC Scopus subject areas
- Materials Science(all)