ACCEPTOR IMPLANTATION IN In//0//. //5//3Ga//0//. //4//7As.

P. N. Favennec*, H. L'Haridon, M. Gauneau, M. Salvi, J. M. Roquais, M. Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Be, Mg, Zn and Hg have been implanted in In//0//. //5//3Ga//0//. //4//7As. For Be, Mg and Zn, the quick diffusion of the implanted impurities yields difficulties to get a p-type layer after implantation and annealing. On the other hand, mercury does not diffuse towards the bulk and behaves as an acceptor dopant impurity. Thin p** plus layers are obtained in In//0//. //5//3Ga//0//. //4//7As by mercury implantation. A comparison based on the chemical profiles and on the electrical results is performed for the four acceptor impurities.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
Number of pages6
StatePublished - 1986

Publication series

NameInstitute of Physics Conference Series
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'ACCEPTOR IMPLANTATION IN In//0//. //5//3Ga//0//. //4//7As.'. Together they form a unique fingerprint.

Cite this