ACCEPTOR IMPLANTATION IN In//0//. //5//3Ga//0//. //4//7As.

P. N. Favennec; H. L'Haridon; M. Gauneau; M. Salvi; J. M. Roquais; M. Razeghi

ACCEPTOR IMPLANTATION IN In//0//. //5//3Ga//0//. //4//7As.

P. N. Favennec^*, H. L'Haridon, M. Gauneau, M. Salvi, J. M. Roquais, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Be, Mg, Zn and Hg have been implanted in In//0//. //5//3Ga//0//. //4//7As. For Be, Mg and Zn, the quick diffusion of the implanted impurities yields difficulties to get a p-type layer after implantation and annealing. On the other hand, mercury does not diffuse towards the bulk and behaves as an acceptor dopant impurity. Thin p** plus layers are obtained in In//0//. //5//3Ga//0//. //4//7As by mercury implantation. A comparison based on the chemical profiles and on the electrical results is performed for the four acceptor impurities.

Original language	English (US)
Title of host publication	Institute of Physics Conference Series
Pages	343-348
Number of pages	6
Edition	79
State	Published - 1986

Publication series

Name	Institute of Physics Conference Series
Number	79
ISSN (Print)	0373-0751

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

@inproceedings{0361d375d34d4488a4606edd8b1a1989,

title = "ACCEPTOR IMPLANTATION IN In//0//. //5//3Ga//0//. //4//7As.",

abstract = "Be, Mg, Zn and Hg have been implanted in In//0//. //5//3Ga//0//. //4//7As. For Be, Mg and Zn, the quick diffusion of the implanted impurities yields difficulties to get a p-type layer after implantation and annealing. On the other hand, mercury does not diffuse towards the bulk and behaves as an acceptor dopant impurity. Thin p** plus layers are obtained in In//0//. //5//3Ga//0//. //4//7As by mercury implantation. A comparison based on the chemical profiles and on the electrical results is performed for the four acceptor impurities.",

author = "Favennec, {P. N.} and H. L'Haridon and M. Gauneau and M. Salvi and Roquais, {J. M.} and M. Razeghi",

year = "1986",

language = "English (US)",

isbn = "0854981705",

series = "Institute of Physics Conference Series",

number = "79",

pages = "343--348",

booktitle = "Institute of Physics Conference Series",

edition = "79",

}

TY - GEN

T1 - ACCEPTOR IMPLANTATION IN In//0//. //5//3Ga//0//. //4//7As.

AU - Favennec, P. N.

AU - L'Haridon, H.

AU - Gauneau, M.

AU - Salvi, M.

AU - Roquais, J. M.

AU - Razeghi, M.

PY - 1986

Y1 - 1986

N2 - Be, Mg, Zn and Hg have been implanted in In//0//. //5//3Ga//0//. //4//7As. For Be, Mg and Zn, the quick diffusion of the implanted impurities yields difficulties to get a p-type layer after implantation and annealing. On the other hand, mercury does not diffuse towards the bulk and behaves as an acceptor dopant impurity. Thin p** plus layers are obtained in In//0//. //5//3Ga//0//. //4//7As by mercury implantation. A comparison based on the chemical profiles and on the electrical results is performed for the four acceptor impurities.

AB - Be, Mg, Zn and Hg have been implanted in In//0//. //5//3Ga//0//. //4//7As. For Be, Mg and Zn, the quick diffusion of the implanted impurities yields difficulties to get a p-type layer after implantation and annealing. On the other hand, mercury does not diffuse towards the bulk and behaves as an acceptor dopant impurity. Thin p** plus layers are obtained in In//0//. //5//3Ga//0//. //4//7As by mercury implantation. A comparison based on the chemical profiles and on the electrical results is performed for the four acceptor impurities.

UR - http://www.scopus.com/inward/record.url?scp=0023030209&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023030209&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0023030209

SN - 0854981705

T3 - Institute of Physics Conference Series

SP - 343

EP - 348

BT - Institute of Physics Conference Series

ER -

ACCEPTOR IMPLANTATION IN In//0//. //5//3Ga//0//. //4//7As.

Abstract

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