ACCEPTOR IMPLANTATION IN In//0//. //5//3Ga//0//. //4//7As.

P. N. Favennec*, H. L'Haridon, M. Gauneau, M. Salvi, J. M. Roquais, M. Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Be, Mg, Zn and Hg have been implanted in In//0//. //5//3Ga//0//. //4//7As. For Be, Mg and Zn, the quick diffusion of the implanted impurities yields difficulties to get a p-type layer after implantation and annealing. On the other hand, mercury does not diffuse towards the bulk and behaves as an acceptor dopant impurity. Thin p** plus layers are obtained in In//0//. //5//3Ga//0//. //4//7As by mercury implantation. A comparison based on the chemical profiles and on the electrical results is performed for the four acceptor impurities.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
Pages343-348
Number of pages6
Edition79
StatePublished - 1986

Publication series

NameInstitute of Physics Conference Series
Number79
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • General Physics and Astronomy

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