Acceptors in undoped GaN studied by transient photoluminescence

Roman Y. Korotkov*, M. A. Reshchikov, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

Acceptors responsible for the 2.2, 2.9 and 3.27 eV photoluminescence (PL) bands in undoped GaN were studied by transient PL. A non-exponential decay of PL intensity for all the three bands is observed at low temperature consistent with donor-acceptor pair recombination. The transitions are attributed to recombination involving a shallow donor and three different acceptors. At temperatures in excess of about 100 K a new recombination process emerges as evident from the nearly exponential PL decay. We attribute this to free-to-bound transitions involving free electrons and acceptors. Electron-capture cross-sections of 3 × 10-19, 2 × 10-20 and 3 × 10-21 cm2 are calculated for the acceptors responsible for the 3.27, 2.9 and 2.2 eV bands. These acceptors are attributed to multiply charged defects involving a gallium vacancy.

Original languageEnglish (US)
Pages (from-to)1-7
Number of pages7
JournalPhysica B: Condensed Matter
Volume325
DOIs
StatePublished - Jan 2003

Keywords

  • Acceptors
  • GaN
  • Transient photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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