Acceptors in undoped GaN studied by transient photoluminescence

Roman Y. Korotkov; M. A. Reshchikov; B. W. Wessels

doi:10.1016/S0921-4526(02)01209-7

Acceptors in undoped GaN studied by transient photoluminescence

Roman Y. Korotkov^*, M. A. Reshchikov, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

Acceptors responsible for the 2.2, 2.9 and 3.27 eV photoluminescence (PL) bands in undoped GaN were studied by transient PL. A non-exponential decay of PL intensity for all the three bands is observed at low temperature consistent with donor-acceptor pair recombination. The transitions are attributed to recombination involving a shallow donor and three different acceptors. At temperatures in excess of about 100 K a new recombination process emerges as evident from the nearly exponential PL decay. We attribute this to free-to-bound transitions involving free electrons and acceptors. Electron-capture cross-sections of 3 × 10^-19, 2 × 10^-20 and 3 × 10^-21 cm² are calculated for the acceptors responsible for the 3.27, 2.9 and 2.2 eV bands. These acceptors are attributed to multiply charged defects involving a gallium vacancy.

Original language	English (US)
Pages (from-to)	1-7
Number of pages	7
Journal	Physica B: Condensed Matter
Volume	325
DOIs	https://doi.org/10.1016/S0921-4526(02)01209-7
State	Published - Jan 2003

Keywords

Acceptors
GaN
Transient photoluminescence

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(02)01209-7

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title = "Acceptors in undoped GaN studied by transient photoluminescence",

abstract = "Acceptors responsible for the 2.2, 2.9 and 3.27 eV photoluminescence (PL) bands in undoped GaN were studied by transient PL. A non-exponential decay of PL intensity for all the three bands is observed at low temperature consistent with donor-acceptor pair recombination. The transitions are attributed to recombination involving a shallow donor and three different acceptors. At temperatures in excess of about 100 K a new recombination process emerges as evident from the nearly exponential PL decay. We attribute this to free-to-bound transitions involving free electrons and acceptors. Electron-capture cross-sections of 3 × 10-19, 2 × 10-20 and 3 × 10-21 cm2 are calculated for the acceptors responsible for the 3.27, 2.9 and 2.2 eV bands. These acceptors are attributed to multiply charged defects involving a gallium vacancy.",

keywords = "Acceptors, GaN, Transient photoluminescence",

author = "Korotkov, {Roman Y.} and Reshchikov, {M. A.} and Wessels, {B. W.}",

note = "Funding Information: This work was supported by the National Science Foundation GOALI Program, under grant number DMR-970514.",

year = "2003",

month = jan,

doi = "10.1016/S0921-4526(02)01209-7",

language = "English (US)",

volume = "325",

pages = "1--7",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

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TY - JOUR

T1 - Acceptors in undoped GaN studied by transient photoluminescence

AU - Korotkov, Roman Y.

AU - Reshchikov, M. A.

AU - Wessels, B. W.

N1 - Funding Information: This work was supported by the National Science Foundation GOALI Program, under grant number DMR-970514.

PY - 2003/1

Y1 - 2003/1

N2 - Acceptors responsible for the 2.2, 2.9 and 3.27 eV photoluminescence (PL) bands in undoped GaN were studied by transient PL. A non-exponential decay of PL intensity for all the three bands is observed at low temperature consistent with donor-acceptor pair recombination. The transitions are attributed to recombination involving a shallow donor and three different acceptors. At temperatures in excess of about 100 K a new recombination process emerges as evident from the nearly exponential PL decay. We attribute this to free-to-bound transitions involving free electrons and acceptors. Electron-capture cross-sections of 3 × 10-19, 2 × 10-20 and 3 × 10-21 cm2 are calculated for the acceptors responsible for the 3.27, 2.9 and 2.2 eV bands. These acceptors are attributed to multiply charged defects involving a gallium vacancy.

AB - Acceptors responsible for the 2.2, 2.9 and 3.27 eV photoluminescence (PL) bands in undoped GaN were studied by transient PL. A non-exponential decay of PL intensity for all the three bands is observed at low temperature consistent with donor-acceptor pair recombination. The transitions are attributed to recombination involving a shallow donor and three different acceptors. At temperatures in excess of about 100 K a new recombination process emerges as evident from the nearly exponential PL decay. We attribute this to free-to-bound transitions involving free electrons and acceptors. Electron-capture cross-sections of 3 × 10-19, 2 × 10-20 and 3 × 10-21 cm2 are calculated for the acceptors responsible for the 3.27, 2.9 and 2.2 eV bands. These acceptors are attributed to multiply charged defects involving a gallium vacancy.

KW - Acceptors

KW - GaN

KW - Transient photoluminescence

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U2 - 10.1016/S0921-4526(02)01209-7

DO - 10.1016/S0921-4526(02)01209-7

M3 - Article

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SN - 0921-4526

VL - 325

SP - 1

EP - 7

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Acceptors in undoped GaN studied by transient photoluminescence

Abstract

Keywords

ASJC Scopus subject areas

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