INIS
lifetime
100%
recombination
100%
evaluation
66%
semiconductor materials
66%
ionization
66%
gallium arsenides
66%
tools
33%
balances
33%
energy
33%
performance
33%
prediction
33%
optimization
33%
carriers
33%
wave functions
33%
doped materials
33%
wave propagation
33%
measured values
33%
detailed balance principle
33%
Engineering
Auger Recombination
100%
Gallium Arsenide
66%
Impact Ionization
66%
Recombination Lifetime
33%
Direct Method
33%
Doped Gaas
33%
Measured Value
33%
Material Performance
33%
Energy Band
33%
Indirect Method
33%
Minority Carrier
33%
Direct Evaluation
33%
Evaluation
33%
Prediction
33%
Codes
33%
Ionization Rate
33%
Chemistry
Auger Recombination
100%
Semiconductor
66%
Impact Ionization
66%
Plane Wave
33%
Wave Function
33%
Procedure
33%
Potential
33%
Physics
First-Principles
66%
Semiconductor
66%
Wave Function
33%
Minority Carriers
33%
Rules
33%
Evaluation
33%
Energy Bands
33%
Computer Science
Impact Ionization
66%
Performance Optimization
33%
Indirect Method
33%
Unified Framework
33%
Measured Value
33%
Minority Carrier
33%
Direct Evaluation
33%
Evaluation
33%
Material Science
Semiconductor Material
66%
Indium Gallium Arsenide
66%