Active plasmonic-dielectric integrated devices on silicon platform based on metal-edge enhanced mode confinement.

Seng-Tiong Ho, Michael Hsieh, Qiang Bai, Yingyan Huang, Yongming Tu, Leonides Ocala, Chenguang Yuan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publicationPhotonics West 2017
PublisherSPIE
StatePublished - 2017

Cite this

Ho, S-T., Hsieh, M., Bai, Q., Huang, Y., Tu, Y., Ocala, L., & Yuan, C. (2017). Active plasmonic-dielectric integrated devices on silicon platform based on metal-edge enhanced mode confinement. In Photonics West 2017 SPIE.