Additive soft-lithographic patterning of submicrometer- and nanometer-scale large-area resists on electronic materials

Heejoon Ahn; Keon Jae Lee; Anne Shim; John A. Rogers; Ralph G. Nuzzo

doi:10.1021/nl051894u

Additive soft-lithographic patterning of submicrometer- and nanometer-scale large-area resists on electronic materials

Heejoon Ahn, Keon Jae Lee, Anne Shim, John A. Rogers, Ralph G. Nuzzo^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We describe a novel soft-lithographic technique possessing broad utility for the fabrication of large area, nanoscale (∼100 nm) multilayer resist structures on electronic material substrates. This additive patterning method transfers ultrathin poly(dimethylsiloxane) (PDMS) decals to an underlying SiO ₂-capped organic planarazation layer. The PDMS patterns serve as a latent image through which high-quality multilayer resist structures can be developed using reactive ion-beam etching.

Original language	English (US)
Pages (from-to)	2533-2537
Number of pages	5
Journal	Nano letters
Volume	5
Issue number	12
DOIs	https://doi.org/10.1021/nl051894u
State	Published - Dec 1 2005

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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abstract = "We describe a novel soft-lithographic technique possessing broad utility for the fabrication of large area, nanoscale (∼100 nm) multilayer resist structures on electronic material substrates. This additive patterning method transfers ultrathin poly(dimethylsiloxane) (PDMS) decals to an underlying SiO 2-capped organic planarazation layer. The PDMS patterns serve as a latent image through which high-quality multilayer resist structures can be developed using reactive ion-beam etching.",

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AU - Lee, Keon Jae

AU - Shim, Anne

AU - Rogers, John A.

AU - Nuzzo, Ralph G.

PY - 2005/12/1

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AB - We describe a novel soft-lithographic technique possessing broad utility for the fabrication of large area, nanoscale (∼100 nm) multilayer resist structures on electronic material substrates. This additive patterning method transfers ultrathin poly(dimethylsiloxane) (PDMS) decals to an underlying SiO 2-capped organic planarazation layer. The PDMS patterns serve as a latent image through which high-quality multilayer resist structures can be developed using reactive ion-beam etching.

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