Abstract
The structure and surface morphology of In overlayers on Si(100) surfaces were investigated as a function of substrate temperature and surface coverage using low-energy and reflection high-energy electron diffraction as well as Auger electron spectroscopy. Desorption kinetics of adsorbed In was studied with modulated-beam desorption and temperature-programmed desorption spectroscopies. Indium was found to grow on Si(100) according to a Stranski-Krastanov mechanism with the initial formation of several two-dimensional phases preceding the nucleation and growth of three-dimensional In islands. Binding energies and frequency factors were extracted from the desorption measurements using a model based on first-order desorption from several interdependent surface phases. First-order and zeroth-order kinetics were observed for the total desorbing flux from coexisting surface phases.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 314-334 |
| Number of pages | 21 |
| Journal | Surface Science |
| Volume | 209 |
| Issue number | 3 |
| DOIs | |
| State | Published - Mar 1 1989 |
Funding
The authors gratefully acknowledge the financial support of the Swedish Natural Science Research Council (NFR), the Joint Services Electronics Program (USA), and the Semiconductor Research Corporation (USA) during the course of this work.
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry