Adsorption and desorption kinetics of In on Si(100)

J. Knall; S. A. Barnett; J. E. Sundgren; J. E. Greene

doi:10.1016/0039-6028(89)90078-2

Adsorption and desorption kinetics of In on Si(100)

J. Knall^*, S. A. Barnett, J. E. Sundgren, J. E. Greene

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

The structure and surface morphology of In overlayers on Si(100) surfaces were investigated as a function of substrate temperature and surface coverage using low-energy and reflection high-energy electron diffraction as well as Auger electron spectroscopy. Desorption kinetics of adsorbed In was studied with modulated-beam desorption and temperature-programmed desorption spectroscopies. Indium was found to grow on Si(100) according to a Stranski-Krastanov mechanism with the initial formation of several two-dimensional phases preceding the nucleation and growth of three-dimensional In islands. Binding energies and frequency factors were extracted from the desorption measurements using a model based on first-order desorption from several interdependent surface phases. First-order and zeroth-order kinetics were observed for the total desorbing flux from coexisting surface phases.

Original language	English (US)
Pages (from-to)	314-334
Number of pages	21
Journal	Surface Science
Volume	209
Issue number	3
DOIs	https://doi.org/10.1016/0039-6028(89)90078-2
State	Published - Mar 1 1989

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(89)90078-2

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title = "Adsorption and desorption kinetics of In on Si(100)",

abstract = "The structure and surface morphology of In overlayers on Si(100) surfaces were investigated as a function of substrate temperature and surface coverage using low-energy and reflection high-energy electron diffraction as well as Auger electron spectroscopy. Desorption kinetics of adsorbed In was studied with modulated-beam desorption and temperature-programmed desorption spectroscopies. Indium was found to grow on Si(100) according to a Stranski-Krastanov mechanism with the initial formation of several two-dimensional phases preceding the nucleation and growth of three-dimensional In islands. Binding energies and frequency factors were extracted from the desorption measurements using a model based on first-order desorption from several interdependent surface phases. First-order and zeroth-order kinetics were observed for the total desorbing flux from coexisting surface phases.",

author = "J. Knall and Barnett, {S. A.} and Sundgren, {J. E.} and Greene, {J. E.}",

note = "Funding Information: The authors gratefully acknowledge the financial support of the Swedish Natural Science Research Council (NFR), the Joint Services Electronics Program (USA), and the Semiconductor Research Corporation (USA) during the course of this work.",

year = "1989",

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doi = "10.1016/0039-6028(89)90078-2",

language = "English (US)",

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pages = "314--334",

journal = "Surface Science",

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TY - JOUR

T1 - Adsorption and desorption kinetics of In on Si(100)

AU - Knall, J.

AU - Barnett, S. A.

AU - Sundgren, J. E.

AU - Greene, J. E.

N1 - Funding Information: The authors gratefully acknowledge the financial support of the Swedish Natural Science Research Council (NFR), the Joint Services Electronics Program (USA), and the Semiconductor Research Corporation (USA) during the course of this work.

PY - 1989/3/1

Y1 - 1989/3/1

N2 - The structure and surface morphology of In overlayers on Si(100) surfaces were investigated as a function of substrate temperature and surface coverage using low-energy and reflection high-energy electron diffraction as well as Auger electron spectroscopy. Desorption kinetics of adsorbed In was studied with modulated-beam desorption and temperature-programmed desorption spectroscopies. Indium was found to grow on Si(100) according to a Stranski-Krastanov mechanism with the initial formation of several two-dimensional phases preceding the nucleation and growth of three-dimensional In islands. Binding energies and frequency factors were extracted from the desorption measurements using a model based on first-order desorption from several interdependent surface phases. First-order and zeroth-order kinetics were observed for the total desorbing flux from coexisting surface phases.

AB - The structure and surface morphology of In overlayers on Si(100) surfaces were investigated as a function of substrate temperature and surface coverage using low-energy and reflection high-energy electron diffraction as well as Auger electron spectroscopy. Desorption kinetics of adsorbed In was studied with modulated-beam desorption and temperature-programmed desorption spectroscopies. Indium was found to grow on Si(100) according to a Stranski-Krastanov mechanism with the initial formation of several two-dimensional phases preceding the nucleation and growth of three-dimensional In islands. Binding energies and frequency factors were extracted from the desorption measurements using a model based on first-order desorption from several interdependent surface phases. First-order and zeroth-order kinetics were observed for the total desorbing flux from coexisting surface phases.

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U2 - 10.1016/0039-6028(89)90078-2

DO - 10.1016/0039-6028(89)90078-2

M3 - Article

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VL - 209

SP - 314

EP - 334

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 3

ER -

Adsorption and desorption kinetics of In on Si(100)

Abstract

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