Adsorption sites of Te on Si(0 0 1)

P. F. Lyman*, D. A. Walko, D. L. Marasco, H. L. Hutchason, M. E. Keeffe, P. A. Montano, M. J. Bedzyk

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Using multiple surface science techniques, we have investigated the structure of 0.3-1 Te monolayers adsorbed on Si(001). X-ray standing waves, low-energy electron diffraction, temperature-programmed desorption, and Auger electron spectroscopy show a relatively poorly-ordered surface. The disorder is due to two nearly degenerate Te adsorption sites, which tends to double the periodicity along one direction of the surface and reduces adatom/substrate mismatch by slightly increasing the separation of adjacent Te atoms. High-temperature anneals around 575 °C increase the degree of local and long-range order, while leaving the average local structure unchanged. Our findings are consistent with recent ab initio molecular dynamics simulations but not with experimental studies wherein surfaces were prepared by desorption of CdTe films.

Original languageEnglish (US)
Pages (from-to)248-260
Number of pages13
JournalSurface Science
Volume561
Issue number2-3
DOIs
StatePublished - Jul 20 2004

Keywords

  • Chalcogens
  • Low energy electron diffraction (LEED)
  • Low index single crystal surfaces
  • Silicon
  • Surface structure, morphology, roughness, and topography
  • Thermal desorption spectroscopy
  • X-ray standing waves

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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