Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications

Y. Wei; A. Gin; M. Razeghi; G. J. Brown

doi:10.1063/1.1476395

Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications

Y. Wei^*, A. Gin, M. Razeghi, G. J. Brown

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

140 Scopus citations

Abstract

We report on the temperature dependence of the photoresponse of very long wavelength infrared type-II InAs/GaSb superlattice based photovoltaic detectors grown by molecular-beam epitaxy. The detectors had a 50% cutoff wavelength of 18.8 μm and a peak current responsivity of 4 A/W at 80 K. A peak detectivity of 4.5×10¹⁰cmHz^1/2/W was achieved at 80 K at a reverse bias of 110 mV. The generation-recombination lifetime was 0.4 ns at 80 K. The cutoff wavelength increased very slowly with increasing temperature with a net shift from 20 to 80 K of only 1.2 μm.

Original language	English (US)
Pages (from-to)	3262-3264
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	18
DOIs	https://doi.org/10.1063/1.1476395
State	Published - May 6 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications",

abstract = "We report on the temperature dependence of the photoresponse of very long wavelength infrared type-II InAs/GaSb superlattice based photovoltaic detectors grown by molecular-beam epitaxy. The detectors had a 50% cutoff wavelength of 18.8 μm and a peak current responsivity of 4 A/W at 80 K. A peak detectivity of 4.5×1010cmHz1/2/W was achieved at 80 K at a reverse bias of 110 mV. The generation-recombination lifetime was 0.4 ns at 80 K. The cutoff wavelength increased very slowly with increasing temperature with a net shift from 20 to 80 K of only 1.2 μm.",

author = "Y. Wei and A. Gin and M. Razeghi and Brown, {G. J.}",

year = "2002",

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T1 - Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications

AU - Wei, Y.

AU - Gin, A.

AU - Razeghi, M.

AU - Brown, G. J.

PY - 2002/5/6

Y1 - 2002/5/6

N2 - We report on the temperature dependence of the photoresponse of very long wavelength infrared type-II InAs/GaSb superlattice based photovoltaic detectors grown by molecular-beam epitaxy. The detectors had a 50% cutoff wavelength of 18.8 μm and a peak current responsivity of 4 A/W at 80 K. A peak detectivity of 4.5×1010cmHz1/2/W was achieved at 80 K at a reverse bias of 110 mV. The generation-recombination lifetime was 0.4 ns at 80 K. The cutoff wavelength increased very slowly with increasing temperature with a net shift from 20 to 80 K of only 1.2 μm.

AB - We report on the temperature dependence of the photoresponse of very long wavelength infrared type-II InAs/GaSb superlattice based photovoltaic detectors grown by molecular-beam epitaxy. The detectors had a 50% cutoff wavelength of 18.8 μm and a peak current responsivity of 4 A/W at 80 K. A peak detectivity of 4.5×1010cmHz1/2/W was achieved at 80 K at a reverse bias of 110 mV. The generation-recombination lifetime was 0.4 ns at 80 K. The cutoff wavelength increased very slowly with increasing temperature with a net shift from 20 to 80 K of only 1.2 μm.

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ER -

Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications

Abstract

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