Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications

Y. Wei*, A. Gin, M. Razeghi, G. J. Brown

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

140 Scopus citations

Abstract

We report on the temperature dependence of the photoresponse of very long wavelength infrared type-II InAs/GaSb superlattice based photovoltaic detectors grown by molecular-beam epitaxy. The detectors had a 50% cutoff wavelength of 18.8 μm and a peak current responsivity of 4 A/W at 80 K. A peak detectivity of 4.5×1010cmHz1/2/W was achieved at 80 K at a reverse bias of 110 mV. The generation-recombination lifetime was 0.4 ns at 80 K. The cutoff wavelength increased very slowly with increasing temperature with a net shift from 20 to 80 K of only 1.2 μm.

Original languageEnglish (US)
Pages (from-to)3262-3264
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number18
DOIs
StatePublished - May 6 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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