Abstract
We report on the temperature dependence of the photoresponse of very long wavelength infrared type-II InAs/GaSb superlattice based photovoltaic detectors grown by molecular-beam epitaxy. The detectors had a 50% cutoff wavelength of 18.8 μm and a peak current responsivity of 4 A/W at 80 K. A peak detectivity of 4.5×1010cmHz1/2/W was achieved at 80 K at a reverse bias of 110 mV. The generation-recombination lifetime was 0.4 ns at 80 K. The cutoff wavelength increased very slowly with increasing temperature with a net shift from 20 to 80 K of only 1.2 μm.
Original language | English (US) |
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Pages (from-to) | 3262-3264 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 80 |
Issue number | 18 |
DOIs | |
State | Published - May 6 2002 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)