Today, most infrared focal plane arrays (FPAs) utilize a hybrid scheme. To achieve higher device reliability and lower cost, monolithic FPAs with Si based readout integrated circuits (ROICs) are the trend of the future development. In this paper, two approaches for monolithic FPAs are proposed: double sided integration and selective epitaxy integration. For comparison, the fabrication process for hybrid quantum well infrared photodetectors (QWIP) FPAs are also described. Many problems, such as the growth of QWIPs on Si substrate and processing incompatibility between Si and III-V semiconductors, need to be solved before monolithic FPAs can be realized. Experimental work on GaInAs/InP QWIP-on-Si is given in this paper. A record high detectivity of 2.3 × 10 9 cm Hz 1/2 /W was obtained for one QWIP-on-Si detector at 77 K.
- Focal plane array
- Quantum well infrared photodetedor
- Si substrate
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics