Advanced monolithic quantum well infrared photodetector focal plane array integrated with silicon readout integrated circuit

Jutao Jiang, Stanley Tsao, Kan Mi, Manijeh Razeghi*, Gail J. Brown, Christopher Jelen, Meimei Z. Tidrow

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Today, most infrared focal plane arrays (FPAs) utilize a hybrid scheme. To achieve higher device reliability and lower cost, monolithic FPAs with Si based readout integrated circuits (ROICs) are the trend of the future development. In this paper, two approaches for monolithic FPAs are proposed: double sided integration and selective epitaxy integration. For comparison, the fabrication process for hybrid quantum well infrared photodetectors (QWIP) FPAs are also described. Many problems, such as the growth of QWIPs on Si substrate and processing incompatibility between Si and III-V semiconductors, need to be solved before monolithic FPAs can be realized. Experimental work on GaInAs/InP QWIP-on-Si is given in this paper. A record high detectivity of 2.3 × 10 9 cm Hz 1/2 /W was obtained for one QWIP-on-Si detector at 77 K.

Original languageEnglish (US)
Pages (from-to)199-207
Number of pages9
JournalInfrared Physics and Technology
Volume46
Issue number3
DOIs
StatePublished - Jan 1 2005

Keywords

  • Focal plane array
  • GaInAs
  • InP
  • Monolithic
  • Quantum well infrared photodetedor
  • Si substrate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Advanced monolithic quantum well infrared photodetector focal plane array integrated with silicon readout integrated circuit'. Together they form a unique fingerprint.

Cite this