Advances in UV sensitive visible blind GaN-based APDs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this paper, we describe our current state-of-the-art process of making visible-blind APDs based on GaN. We have grown our material on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs are compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes. Single photon detection capabilities with over 30% are demonstrated. We show how with pulse height discrimination the Geiger-mode operation conditions can be optimized for enhanced SPDE versus dark counts.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nanophotonic Devices VIII
DOIs
StatePublished - May 13 2011
EventQuantum Sensing and Nanophotonic Devices VIII - San Francisco, CA, United States
Duration: Jan 23 2011Jan 27 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7945
ISSN (Print)0277-786X

Other

OtherQuantum Sensing and Nanophotonic Devices VIII
CountryUnited States
CitySan Francisco, CA
Period1/23/111/27/11

Keywords

  • APD
  • Avalanche Photodiode
  • GaN
  • Geiger Mode
  • Single Photon Detection

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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