@inproceedings{f96576c316d443f1ac95e4a68b56800a,
title = "Advances in UV sensitive visible blind GaN-based APDs",
abstract = "In this paper, we describe our current state-of-the-art process of making visible-blind APDs based on GaN. We have grown our material on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs are compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes. Single photon detection capabilities with over 30% are demonstrated. We show how with pulse height discrimination the Geiger-mode operation conditions can be optimized for enhanced SPDE versus dark counts.",
keywords = "APD, Avalanche Photodiode, GaN, Geiger Mode, Single Photon Detection",
author = "Ulmer, {Melville P.} and Ryan McClintock and Manijeh Razeghi",
year = "2011",
doi = "10.1117/12.879942",
language = "English (US)",
isbn = "9780819484826",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Quantum Sensing and Nanophotonic Devices VIII",
note = "Quantum Sensing and Nanophotonic Devices VIII ; Conference date: 23-01-2011 Through 27-01-2011",
}