Advances in Wide-Band-Gap Semiconductor Based Photocathode Devices for Low Light Level Applications

M. P. Ulmer*, B. W. Wessels, B. Han, J. Gregie, A. Tremsin, O. H.W. Siegmund

*Corresponding author for this work

Research output: Contribution to journalConference article

34 Scopus citations

Abstract

Our work with GaN based photocathodes shows a strong dependence on the photo-emission response versus the carrier concentration and conductivity of the films. Films with quantum efficiency (QE) as high as 56% in opaque mode and as high as 30% in transmission mode have been made. Although surface activation plays a key role, the characteristics of the films, e.g. the thickness, film structure, minority carrier diffusion length, and doping, all play a role in affecting the photo-emission QE and especially its spectral dependence. The QE of films with the various properties is discussed and the utility of using measurements of the film properties to predict the optimal performance of the resulting photocathode is demonstrated.

Original languageEnglish (US)
Pages (from-to)144-154
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5164
DOIs
StatePublished - 2003
EventUV/EUV and Visible Space Instrumentation for Astronomy II - San Diego, CA, United States
Duration: Aug 7 2003Aug 7 2003

Keywords

  • GaN
  • Photocathode
  • UV astronomy
  • Wide-band-gap semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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