Advances in Wide-Band-Gap Semiconductor Based Photocathode Devices for Low Light Level Applications

M. P. Ulmer; B. W. Wessels; B. Han; J. Gregie; A. Tremsin; O. H.W. Siegmund

doi:10.1117/12.507993

Advances in Wide-Band-Gap Semiconductor Based Photocathode Devices for Low Light Level Applications

M. P. Ulmer^*, B. W. Wessels, B. Han, J. Gregie, A. Tremsin, O. H.W. Siegmund

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

40 Scopus citations

Abstract

Our work with GaN based photocathodes shows a strong dependence on the photo-emission response versus the carrier concentration and conductivity of the films. Films with quantum efficiency (QE) as high as 56% in opaque mode and as high as 30% in transmission mode have been made. Although surface activation plays a key role, the characteristics of the films, e.g. the thickness, film structure, minority carrier diffusion length, and doping, all play a role in affecting the photo-emission QE and especially its spectral dependence. The QE of films with the various properties is discussed and the utility of using measurements of the film properties to predict the optimal performance of the resulting photocathode is demonstrated.

Original language	English (US)
Pages (from-to)	144-154
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5164
DOIs	https://doi.org/10.1117/12.507993
State	Published - 2003
Event	UV/EUV and Visible Space Instrumentation for Astronomy II - San Diego, CA, United States Duration: Aug 7 2003 → Aug 7 2003

Keywords

GaN
Photocathode
UV astronomy
Wide-band-gap semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.507993

Cite this

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title = "Advances in Wide-Band-Gap Semiconductor Based Photocathode Devices for Low Light Level Applications",

abstract = "Our work with GaN based photocathodes shows a strong dependence on the photo-emission response versus the carrier concentration and conductivity of the films. Films with quantum efficiency (QE) as high as 56% in opaque mode and as high as 30% in transmission mode have been made. Although surface activation plays a key role, the characteristics of the films, e.g. the thickness, film structure, minority carrier diffusion length, and doping, all play a role in affecting the photo-emission QE and especially its spectral dependence. The QE of films with the various properties is discussed and the utility of using measurements of the film properties to predict the optimal performance of the resulting photocathode is demonstrated.",

keywords = "GaN, Photocathode, UV astronomy, Wide-band-gap semiconductor",

author = "Ulmer, {M. P.} and Wessels, {B. W.} and B. Han and J. Gregie and A. Tremsin and Siegmund, {O. H.W.}",

year = "2003",

doi = "10.1117/12.507993",

language = "English (US)",

volume = "5164",

pages = "144--154",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "UV/EUV and Visible Space Instrumentation for Astronomy II ; Conference date: 07-08-2003 Through 07-08-2003",

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TY - JOUR

T1 - Advances in Wide-Band-Gap Semiconductor Based Photocathode Devices for Low Light Level Applications

AU - Ulmer, M. P.

AU - Wessels, B. W.

AU - Han, B.

AU - Gregie, J.

AU - Tremsin, A.

AU - Siegmund, O. H.W.

PY - 2003

Y1 - 2003

N2 - Our work with GaN based photocathodes shows a strong dependence on the photo-emission response versus the carrier concentration and conductivity of the films. Films with quantum efficiency (QE) as high as 56% in opaque mode and as high as 30% in transmission mode have been made. Although surface activation plays a key role, the characteristics of the films, e.g. the thickness, film structure, minority carrier diffusion length, and doping, all play a role in affecting the photo-emission QE and especially its spectral dependence. The QE of films with the various properties is discussed and the utility of using measurements of the film properties to predict the optimal performance of the resulting photocathode is demonstrated.

AB - Our work with GaN based photocathodes shows a strong dependence on the photo-emission response versus the carrier concentration and conductivity of the films. Films with quantum efficiency (QE) as high as 56% in opaque mode and as high as 30% in transmission mode have been made. Although surface activation plays a key role, the characteristics of the films, e.g. the thickness, film structure, minority carrier diffusion length, and doping, all play a role in affecting the photo-emission QE and especially its spectral dependence. The QE of films with the various properties is discussed and the utility of using measurements of the film properties to predict the optimal performance of the resulting photocathode is demonstrated.

KW - GaN

KW - Photocathode

KW - UV astronomy

KW - Wide-band-gap semiconductor

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DO - 10.1117/12.507993

M3 - Conference article

AN - SCOPUS:1842531366

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VL - 5164

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EP - 154

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - UV/EUV and Visible Space Instrumentation for Astronomy II

Y2 - 7 August 2003 through 7 August 2003

ER -

Advances in Wide-Band-Gap Semiconductor Based Photocathode Devices for Low Light Level Applications

Abstract

Keywords

ASJC Scopus subject areas

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