Advantages of Al-free InGaAsP/GaAs lasers for WDM applications

H. J. Yi; Manijeh Razeghi

Advantages of Al-free InGaAsP/GaAs lasers for WDM applications

H. J. Yi^*, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We examine several critical issues related to laser diodes with wavelength λ approximately 750 - 1000 μm for WDM applications. Particular attention was given to the Vertical Cavity Surface Emitting Laser and Distributed Feedback Laser which are the most central components for the optical interconnect or local-area network, or for pumping the Er or Pr doped optical fiber. Regrowth control, stability and reliability at high power and high temperature operation as well as the optimal design are the most critical issues for the devices. Aluminum-free InGaAsP/GaAs is proposed as an alternative to AlGaAS/GaAs for the WDM applications. Perspectives are presented on how those problems especially, reliability and regrowth issues for WDM application can be eased by this material system.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Louis S. Lome
Pages	350-360
Number of pages	11
State	Published - Jan 1 1996
Event	Wavelength Division Multiplexing Components - San Jose, CA, USA Duration: Jan 29 1996 → Jan 31 1996

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2690

Other

Other	Wavelength Division Multiplexing Components
City	San Jose, CA, USA
Period	1/29/96 → 1/31/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

@inproceedings{83ff4131a0624e86acdd1b0b684bb37f,

title = "Advantages of Al-free InGaAsP/GaAs lasers for WDM applications",

abstract = "We examine several critical issues related to laser diodes with wavelength λ approximately 750 - 1000 μm for WDM applications. Particular attention was given to the Vertical Cavity Surface Emitting Laser and Distributed Feedback Laser which are the most central components for the optical interconnect or local-area network, or for pumping the Er or Pr doped optical fiber. Regrowth control, stability and reliability at high power and high temperature operation as well as the optimal design are the most critical issues for the devices. Aluminum-free InGaAsP/GaAs is proposed as an alternative to AlGaAS/GaAs for the WDM applications. Perspectives are presented on how those problems especially, reliability and regrowth issues for WDM application can be eased by this material system.",

author = "Yi, {H. J.} and Manijeh Razeghi",

year = "1996",

month = jan,

day = "1",

language = "English (US)",

isbn = "0819420646",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

pages = "350--360",

editor = "Lome, {Louis S.}",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Wavelength Division Multiplexing Components ; Conference date: 29-01-1996 Through 31-01-1996",

}

Advantages of Al-free InGaAsP/GaAs lasers for WDM applications. / Yi, H. J.; Razeghi, Manijeh.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Louis S. Lome. 1996. p. 350-360 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2690).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Advantages of Al-free InGaAsP/GaAs lasers for WDM applications

AU - Yi, H. J.

AU - Razeghi, Manijeh

PY - 1996/1/1

Y1 - 1996/1/1

N2 - We examine several critical issues related to laser diodes with wavelength λ approximately 750 - 1000 μm for WDM applications. Particular attention was given to the Vertical Cavity Surface Emitting Laser and Distributed Feedback Laser which are the most central components for the optical interconnect or local-area network, or for pumping the Er or Pr doped optical fiber. Regrowth control, stability and reliability at high power and high temperature operation as well as the optimal design are the most critical issues for the devices. Aluminum-free InGaAsP/GaAs is proposed as an alternative to AlGaAS/GaAs for the WDM applications. Perspectives are presented on how those problems especially, reliability and regrowth issues for WDM application can be eased by this material system.

AB - We examine several critical issues related to laser diodes with wavelength λ approximately 750 - 1000 μm for WDM applications. Particular attention was given to the Vertical Cavity Surface Emitting Laser and Distributed Feedback Laser which are the most central components for the optical interconnect or local-area network, or for pumping the Er or Pr doped optical fiber. Regrowth control, stability and reliability at high power and high temperature operation as well as the optimal design are the most critical issues for the devices. Aluminum-free InGaAsP/GaAs is proposed as an alternative to AlGaAS/GaAs for the WDM applications. Perspectives are presented on how those problems especially, reliability and regrowth issues for WDM application can be eased by this material system.

UR - http://www.scopus.com/inward/record.url?scp=0029719198&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029719198&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029719198

SN - 0819420646

SN - 9780819420640

T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 350

EP - 360

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Lome, Louis S.

T2 - Wavelength Division Multiplexing Components

Y2 - 29 January 1996 through 31 January 1996

ER -

Advantages of Al-free InGaAsP/GaAs lasers for WDM applications

Abstract

Publication series

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this