Advantages of Al-free InGaAsP/GaAs lasers for WDM applications

H. J. Yi*, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We examine several critical issues related to laser diodes with wavelength λ approximately 750 - 1000 μm for WDM applications. Particular attention was given to the Vertical Cavity Surface Emitting Laser and Distributed Feedback Laser which are the most central components for the optical interconnect or local-area network, or for pumping the Er or Pr doped optical fiber. Regrowth control, stability and reliability at high power and high temperature operation as well as the optimal design are the most critical issues for the devices. Aluminum-free InGaAsP/GaAs is proposed as an alternative to AlGaAS/GaAs for the WDM applications. Perspectives are presented on how those problems especially, reliability and regrowth issues for WDM application can be eased by this material system.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsLouis S. Lome
Pages350-360
Number of pages11
StatePublished - Jan 1 1996
EventWavelength Division Multiplexing Components - San Jose, CA, USA
Duration: Jan 29 1996Jan 31 1996

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2690

Other

OtherWavelength Division Multiplexing Components
CitySan Jose, CA, USA
Period1/29/961/31/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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