Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1·5 μm

M. Razeghi; P. Hirtz; R. Blondeau; B. de Cremoux; J. P. Duchemin

doi:10.1049/el:19830327

Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1·5 μm

M. Razeghi, P. Hirtz, R. Blondeau, B. de Cremoux, J. P. Duchemin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We report on the aging of a continuous-wave (CW) GaInAsP/InP double-heterostructure laser emitting at 1·5 μm, grown for the first time by MOCVD. This device has been operated at room temperature for more than 10⁴ h without significant degradation.

Original language	English (US)
Pages (from-to)	481-483
Number of pages	3
Journal	Electronics Letters
Volume	19
Issue number	13
DOIs	https://doi.org/10.1049/el:19830327
State	Published - Jun 23 1983

Keywords

Lasers and laser applications
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19830327

Cite this

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title = "Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1·5 μm",

abstract = "We report on the aging of a continuous-wave (CW) GaInAsP/InP double-heterostructure laser emitting at 1·5 μm, grown for the first time by MOCVD. This device has been operated at room temperature for more than 104 h without significant degradation.",

keywords = "Lasers and laser applications, Semiconductor lasers",

author = "M. Razeghi and P. Hirtz and R. Blondeau and {de Cremoux}, B. and Duchemin, {J. P.}",

year = "1983",

month = jun,

day = "23",

doi = "10.1049/el:19830327",

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journal = "Electronics Letters",

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T1 - Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1·5 μm

AU - Razeghi, M.

AU - Hirtz, P.

AU - Blondeau, R.

AU - de Cremoux, B.

AU - Duchemin, J. P.

PY - 1983/6/23

Y1 - 1983/6/23

N2 - We report on the aging of a continuous-wave (CW) GaInAsP/InP double-heterostructure laser emitting at 1·5 μm, grown for the first time by MOCVD. This device has been operated at room temperature for more than 104 h without significant degradation.

AB - We report on the aging of a continuous-wave (CW) GaInAsP/InP double-heterostructure laser emitting at 1·5 μm, grown for the first time by MOCVD. This device has been operated at room temperature for more than 104 h without significant degradation.

KW - Lasers and laser applications

KW - Semiconductor lasers

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Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1·5 μm

Abstract

Keywords

ASJC Scopus subject areas

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