Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1·5 μm

M. Razeghi, P. Hirtz, R. Blondeau, B. de Cremoux, J. P. Duchemin

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

We report on the aging of a continuous-wave (CW) GaInAsP/InP double-heterostructure laser emitting at 1·5 μm, grown for the first time by MOCVD. This device has been operated at room temperature for more than 104 h without significant degradation.

Original languageEnglish (US)
Pages (from-to)481-483
Number of pages3
JournalElectronics Letters
Volume19
Issue number13
DOIs
StatePublished - Jun 23 1983

Keywords

  • Lasers and laser applications
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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