Air-Stable Direct Bandgap Perovskite Semiconductors: All-Inorganic Tin-Based Heteroleptic Halides AxSnClyIz (A = Cs, Rb)

Jiangwei Li, Constantinos C. Stoumpos, Giancarlo G. Trimarchi, In Chung, Lingling Mao, Michelle Chen, Michael R. Wasielewski, Liduo Wang*, Mercouri G. Kanatzidis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

72 Scopus citations

Abstract

Semiconducting halide perovskites are a class of materials with exciting photoelectronic properties. Compared to the widely studied hybrid organic-inorganic perovskites, the all-inorganic derivatives are less well understood even as they promise high inherent stability. Currently, such materials are limited due to the fact that there is a very narrow choice of inorganic cations that can stabilize the desirable perovskite structure. Herein we report on the synthesis and characterization of novel all-inorganic tin-based perovskites and perovskitoids that can be stabilized by the heteroleptic coordination of chloride and iodide anions, Cs2SnCl2I2 (1) and Cs2.38Rb1.62Sn3Cl8I2 (2), consist of two-dimensional (2D) layers of [SnCl4I2]4- octahedra with different connectivity modes. Compound 1 is an n = 1 Ruddlesden-Popper type perovskite adopting the tetragonal archetype structure (I4/mmm space group; a = 5.5905(3) Å, c = 18.8982(13) Å), while compound 2 crystallizes as an orthorhombic modification (Cmcm space group; a = 5.6730(11) Å, b = 25.973(5) Å, c = 16.587(3) Å) with corrugated layers. The crystal chemistry changes drastically when Cs+ is replaced by the smaller Rb+ cation which leads to the isolation of the low dimensional compounds Rb3SnCl3I2 (3a), Rb3SnCl2.33I2.67 (3b) and Rb7Sn4.25Cl12I3.5 (4), thus illustrating the importance of the A-cation size in the formation of perovskites. The 2D perovskites show wide band gaps and relatively large resistivities, associated with their chemical stability against the oxidation of Sn2+. The chemical stability is coupled with remarkable electronic properties that derive from the perovskite structure. DFT calculations suggest that both compounds are direct band gap semiconductors with large bandwidths, consistently with the experimentally determined band gaps of Eg = 2.62 and 2.81 eV for 1 and 2, respectively. The combination of stability and favorable electronic structure in heteroleptic-halide perovskites presents a new direction toward the realization of functional devices made exclusively from inorganic perovskites.

Original languageEnglish (US)
Pages (from-to)4847-4856
Number of pages10
JournalChemistry of Materials
Volume30
Issue number14
DOIs
StatePublished - Jul 24 2018

Funding

This work was supported by the Department of Energy, Office of Science, Basic Energy Sciences, under Grant SC0012541 (synthesis and characterization of materials, M.G.K.).This work made use of the EPIC facility of the NUANCE Center at Northwestern University, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205); the MRSEC program (NSF DMR-1121262) at the Materials Research Center; the International Institute for Nanotechnology (IIN); the Keck Foundation; the State of Illinois through the IIN. Computational work was done using resources of the National Energy Research Scientific Computing Center (NERSC), a U.S. Department of Energy Office of Science User Facility, supported by the U.S. Department of Energy, Office of Science, under Contract No. DE-AC02-05CH11231. We also thank the National Natural Science Foundation of China under Grant No. 91433205. J. L. gratefully acknowledges financial support from the Joint Educational Ph.D. Program of Chinese Scholarship Council (CSC). This work was supported by the Department of Energy, Office of Science, Basic Energy Sciences, under Grant SC0012541 (synthesis and characterization of materials, M.G.K.).This work made use of the EPIC facility of the NUANCE Center at Northwestern University, which has received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205); the MRSEC program (NSF DMR-1121262) at the Materials Research Center; the International Institute for Nanotechnology (IIN); the Keck Foundation; the State of Illinois, through the IIN. Computational work was done using resources of the National Energy Research Scientific Computing Center (NERSC), a U.S. Department of Energy Office of Science User Facility, supported by the U.S. Department of Energy, Office of Science, under Contract No. DE-AC02-05CH11231. We also thank the National Natural Science Foundation of China under Grant No. 91433205. J. L. gratefully acknowledges financial support from the Joint Educational Ph.D. Program of Chinese Scholarship Council (CSC).

ASJC Scopus subject areas

  • General Chemistry
  • General Chemical Engineering
  • Materials Chemistry

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