Air-Stable Direct Bandgap Perovskite Semiconductors: All-Inorganic Tin-Based Heteroleptic Halides A_xSnCl_yI_z (A = Cs, Rb)

Keyphrases

• Halides 100%
• Direct Band Gap 100%
• All-inorganic 100%
• Air-stable 100%
• Perovskite Semiconductors 100%
• Tin-based 100%
• Heteroleptic 100%
• Inorganic Tin 100%
• Chemical Stability 66%
• Perovskite 66%
• Perovskite Structure 66%
• Halide Perovskites 66%
• Wide Bandgap 33%
• Electronic Structure 33%
• Functional Devices 33%
• Electronic Properties 33%
• Band Gap 33%
• Crystal Chemistry 33%
• Compound II 33%
• Resistivity 33%
• Ruddlesden-Popper 33%
• Tin-based Perovskite 33%
• DFT Calculations 33%
• Orthorhombic 33%
• Tetragonal 33%
• Corrugated Layer 33%
• Octahedron 33%
• Cs + 33%
• Chemistry Changes 33%
• Low-dimensional Compounds 33%
• Iodide Anion 33%
• Cation Size 33%
• Two-dimensional Layer 33%
• Direct Bandgap Semiconductor 33%
• Sn2+ 33%
• Inorganic Anions 33%
• Chloride Anion 33%
• Large Bandwidth 33%
• Inherent Stability 33%
• Inorganic Perovskites 33%
• Two-dimensional Perovskite 33%
• Perovskitoid 33%
• Hybrid Organic-inorganic Perovskites 33%
• Photoelectronic Property 33%

Chemistry

• Band Gap 100%
• Tin 100%
• Halide 100%
• Space Group 50%
• Chemical Stability 50%
• stability 50%
• Electronic Property 25%
• Electronic State 25%
• Octahedral Crystal 25%
• Cmcm 25%
• Crystal Chemistry 25%
• Inorganic Cation 25%
• I4/Mmm 25%
• Photoelectricity 25%
• formation 25%
• Density Functional Theory 25%
• Cesium Ion 25%

Material Science

• Halide 100%
• Tin 100%
• Electronic Property 33%
• Electrical Resistivity 33%
• Oxidation Reaction 33%
• Crystal Chemistry 33%
• Energy Levels 33%