Abstract
Formic acid-hydrogen peroxide and buffered hydrogen fluoride-hydrogen peroxide solutions were used to etch single-crystal strontium titanate to remove carbon contamination and increase hydroxyl group density to improve atomic layer deposition onto these materials. X-ray photoelectron spectroscopy indicated that both are effective for carbon contamination removal. However, for increasing hydroxyl group density on the strontium titanate surface, the buffered hydrogen fluoride-hydrogen peroxide is more effective. Transmission electron microscopy and x-ray photoemission show enhanced platinum deposition on the etched strontium titanate surface. These results provide the basis for optimizing atomic layer deposition for other technologically relevant materials.
Original language | English (US) |
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Pages (from-to) | 661-665 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 422 |
DOIs | |
State | Published - Nov 15 2017 |
Keywords
- Atomic layer deposition
- Etch
- Platinum
- Surface condition
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films