AlGaAs high-power short-wavelength superluminescent integrated source

Yongsheng Zhao*, Guotong Du, Weihua Han, Yanping Fu, Xuemei Li, Junfeng Song, Xiuying Jiang, Dingsan Gao, G. Devane, K. A. Stair, R. P H Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In order to solve the problem in the conventional superluminescent diode (SLD), i.e. its output power is not high enough for some applications, a monolithic superluminescent source by integrating SLD with the tapered semiconductor amplifier has been designed and fabricated. An AlGaAs heterostructure wafer, gain guide of oxide stripe and a way of direct coupling were adopted. The experimental results show that the superluminescent output of SLD can be amplified for about 22 dB by the tapered optical amplifier. A maximum output power of 580 mW has been obtained under pulsed condition.

Original languageEnglish (US)
Pages (from-to)566-567
Number of pages2
JournalProgress in Natural Science
Volume8
Issue number5
StatePublished - 1998

Keywords

  • Integrated source
  • Optical amplifier
  • Superluminescent diode

ASJC Scopus subject areas

  • Materials Science(all)

Fingerprint

Dive into the research topics of 'AlGaAs high-power short-wavelength superluminescent integrated source'. Together they form a unique fingerprint.

Cite this