A novel semiconductor integrated source-AlGaAs Short wavelength superluminescent integrated diode had been suggested and demonstrated. It used direct coupling of the superluminescent diode with the semiconductor amplifier. An AlGaAs SQW heterostructure wafer and gain-guide of oxide-stripe were used in the device. 57 mW superluminescent output power with 20 nm special width (FWHM) are obtained. When the input current of the superluminescent diode is greater than 100 mA, the light-current curve is linearly increased, and it is beneficial to amplify and modulate the small signals. The optical gain of the amplifier in the integrated device is about 21 dB.
|Original language||English (US)|
|Number of pages||4|
|Journal||Guangxue Xuebao/Acta Optica Sinica|
|State||Published - Dec 1 1998|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics