AlGaAs short wavelength integrated superluminescent source

Yongsheng Zhao; Zhongzhe Sun; Xuemei Li; Junfeng Song; Zhiling Wang; Xiuying Jiang; Guotong Du; Shengli Wu; Gregory Devane; Kathleen A. Stair; R. P H Chang

AlGaAs short wavelength integrated superluminescent source

Yongsheng Zhao^*, Zhongzhe Sun, Xuemei Li, Junfeng Song, Zhiling Wang, Xiuying Jiang, Guotong Du, Shengli Wu, Gregory Devane, Kathleen A. Stair, R. P H Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A novel semiconductor integrated source-AlGaAs Short wavelength superluminescent integrated diode had been suggested and demonstrated. It used direct coupling of the superluminescent diode with the semiconductor amplifier. An AlGaAs SQW heterostructure wafer and gain-guide of oxide-stripe were used in the device. 57 mW superluminescent output power with 20 nm special width (FWHM) are obtained. When the input current of the superluminescent diode is greater than 100 mA, the light-current curve is linearly increased, and it is beneficial to amplify and modulate the small signals. The optical gain of the amplifier in the integrated device is about 21 dB.

Original language	English (US)
Pages (from-to)	789-792
Number of pages	4
Journal	Guangxue Xuebao/Acta Optica Sinica
Volume	18
Issue number	6
State	Published - 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Cite this

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title = "AlGaAs short wavelength integrated superluminescent source",

abstract = "A novel semiconductor integrated source-AlGaAs Short wavelength superluminescent integrated diode had been suggested and demonstrated. It used direct coupling of the superluminescent diode with the semiconductor amplifier. An AlGaAs SQW heterostructure wafer and gain-guide of oxide-stripe were used in the device. 57 mW superluminescent output power with 20 nm special width (FWHM) are obtained. When the input current of the superluminescent diode is greater than 100 mA, the light-current curve is linearly increased, and it is beneficial to amplify and modulate the small signals. The optical gain of the amplifier in the integrated device is about 21 dB.",

author = "Yongsheng Zhao and Zhongzhe Sun and Xuemei Li and Junfeng Song and Zhiling Wang and Xiuying Jiang and Guotong Du and Shengli Wu and Gregory Devane and Stair, {Kathleen A.} and Chang, {R. P H}",

year = "1998",

language = "English (US)",

volume = "18",

pages = "789--792",

journal = "Guangxue Xuebao/Acta Optica Sinica",

issn = "0253-2239",

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number = "6",

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TY - JOUR

T1 - AlGaAs short wavelength integrated superluminescent source

AU - Zhao, Yongsheng

AU - Sun, Zhongzhe

AU - Li, Xuemei

AU - Song, Junfeng

AU - Wang, Zhiling

AU - Jiang, Xiuying

AU - Du, Guotong

AU - Wu, Shengli

AU - Devane, Gregory

AU - Stair, Kathleen A.

AU - Chang, R. P H

PY - 1998

Y1 - 1998

N2 - A novel semiconductor integrated source-AlGaAs Short wavelength superluminescent integrated diode had been suggested and demonstrated. It used direct coupling of the superluminescent diode with the semiconductor amplifier. An AlGaAs SQW heterostructure wafer and gain-guide of oxide-stripe were used in the device. 57 mW superluminescent output power with 20 nm special width (FWHM) are obtained. When the input current of the superluminescent diode is greater than 100 mA, the light-current curve is linearly increased, and it is beneficial to amplify and modulate the small signals. The optical gain of the amplifier in the integrated device is about 21 dB.

AB - A novel semiconductor integrated source-AlGaAs Short wavelength superluminescent integrated diode had been suggested and demonstrated. It used direct coupling of the superluminescent diode with the semiconductor amplifier. An AlGaAs SQW heterostructure wafer and gain-guide of oxide-stripe were used in the device. 57 mW superluminescent output power with 20 nm special width (FWHM) are obtained. When the input current of the superluminescent diode is greater than 100 mA, the light-current curve is linearly increased, and it is beneficial to amplify and modulate the small signals. The optical gain of the amplifier in the integrated device is about 21 dB.

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M3 - Article

AN - SCOPUS:0032256544

SN - 0253-2239

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SP - 789

EP - 792

JO - Guangxue Xuebao/Acta Optica Sinica

JF - Guangxue Xuebao/Acta Optica Sinica

IS - 6

ER -

AlGaAs short wavelength integrated superluminescent source

Abstract

ASJC Scopus subject areas

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