AlGaN-based deep UV light emitting diodes with peak emission below 255 nm

Alireza Yasan*, Ryan P McClintock, Kathryn Mayes, Patrick Kung, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

We report on the growth and fabrication of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with peak emission of below 255 nm. In order to achieve such short wavelength UV LEDs, the Al mole fractions in the device layers should be greater than ∼60%. This introdues serious challenges on the growth and doping of Al xGa 1-xN epilayers. However, with the aid of a high-quality AlN template layer and refinement of the growth conditions we have been able to demonstrate UV LEDs emitting below 255 nm. The ratio of the intensity of the electroluminescence primary peak to that of the secondary peak (related to Mg deep levels) is ∼ 18:1 at moderate injection current levels. Milliwatt level output powers have been achieved for these deep UV LEDs.

Original languageEnglish (US)
Article number57
Pages (from-to)197-204
Number of pages8
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume5732
DOIs
StatePublished - Jul 21 2005
EventQuantum Sensing and Nanophotonic Devices II - San Jose, CA, United States
Duration: Jan 23 2005Jan 27 2005

Keywords

  • AlGaN
  • Doping
  • Light-emitting diode
  • MOCVD
  • Ultraviolet

ASJC Scopus subject areas

  • Engineering(all)

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