AlGaN-based deep UV light emitting diodes with peak emission below 255 nm

Alireza Yasan; Ryan McClintock; Kathryn Mayes; Patrick Kung; Manijeh Razeghi

doi:10.1117/12.597078

AlGaN-based deep UV light emitting diodes with peak emission below 255 nm

Alireza Yasan^*, Ryan McClintock, Kathryn Mayes, Patrick Kung, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We report on the growth and fabrication of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with peak emission of below 255 nm. In order to achieve such short wavelength UV LEDs, the Al mole fractions in the device layers should be greater than ∼60%. This introdues serious challenges on the growth and doping of Al _xGa _1-xN epilayers. However, with the aid of a high-quality AlN template layer and refinement of the growth conditions we have been able to demonstrate UV LEDs emitting below 255 nm. The ratio of the intensity of the electroluminescence primary peak to that of the secondary peak (related to Mg deep levels) is ∼ 18:1 at moderate injection current levels. Milliwatt level output powers have been achieved for these deep UV LEDs.

Original language	English (US)
Article number	57
Pages (from-to)	197-204
Number of pages	8
Journal	Progress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume	5732
DOIs	https://doi.org/10.1117/12.597078
State	Published - 2005
Event	Quantum Sensing and Nanophotonic Devices II - San Jose, CA, United States Duration: Jan 23 2005 → Jan 27 2005

Keywords

AlGaN
Doping
Light-emitting diode
MOCVD
Ultraviolet

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Radiology Nuclear Medicine and imaging
Biomaterials

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10.1117/12.597078

Cite this

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title = "AlGaN-based deep UV light emitting diodes with peak emission below 255 nm",

abstract = "We report on the growth and fabrication of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with peak emission of below 255 nm. In order to achieve such short wavelength UV LEDs, the Al mole fractions in the device layers should be greater than ∼60%. This introdues serious challenges on the growth and doping of Al xGa 1-xN epilayers. However, with the aid of a high-quality AlN template layer and refinement of the growth conditions we have been able to demonstrate UV LEDs emitting below 255 nm. The ratio of the intensity of the electroluminescence primary peak to that of the secondary peak (related to Mg deep levels) is ∼ 18:1 at moderate injection current levels. Milliwatt level output powers have been achieved for these deep UV LEDs.",

keywords = "AlGaN, Doping, Light-emitting diode, MOCVD, Ultraviolet",

author = "Alireza Yasan and Ryan McClintock and Kathryn Mayes and Patrick Kung and Manijeh Razeghi",

year = "2005",

doi = "10.1117/12.597078",

language = "English (US)",

volume = "5732",

pages = "197--204",

journal = "Progress in Biomedical Optics and Imaging - Proceedings of SPIE",

issn = "1605-7422",

publisher = "SPIE",

note = "Quantum Sensing and Nanophotonic Devices II ; Conference date: 23-01-2005 Through 27-01-2005",

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TY - JOUR

T1 - AlGaN-based deep UV light emitting diodes with peak emission below 255 nm

AU - Yasan, Alireza

AU - McClintock, Ryan

AU - Mayes, Kathryn

AU - Kung, Patrick

AU - Razeghi, Manijeh

PY - 2005

Y1 - 2005

N2 - We report on the growth and fabrication of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with peak emission of below 255 nm. In order to achieve such short wavelength UV LEDs, the Al mole fractions in the device layers should be greater than ∼60%. This introdues serious challenges on the growth and doping of Al xGa 1-xN epilayers. However, with the aid of a high-quality AlN template layer and refinement of the growth conditions we have been able to demonstrate UV LEDs emitting below 255 nm. The ratio of the intensity of the electroluminescence primary peak to that of the secondary peak (related to Mg deep levels) is ∼ 18:1 at moderate injection current levels. Milliwatt level output powers have been achieved for these deep UV LEDs.

AB - We report on the growth and fabrication of AlGaN-based deep ultraviolet light-emitting diodes (LEDs) with peak emission of below 255 nm. In order to achieve such short wavelength UV LEDs, the Al mole fractions in the device layers should be greater than ∼60%. This introdues serious challenges on the growth and doping of Al xGa 1-xN epilayers. However, with the aid of a high-quality AlN template layer and refinement of the growth conditions we have been able to demonstrate UV LEDs emitting below 255 nm. The ratio of the intensity of the electroluminescence primary peak to that of the secondary peak (related to Mg deep levels) is ∼ 18:1 at moderate injection current levels. Milliwatt level output powers have been achieved for these deep UV LEDs.

KW - AlGaN

KW - Doping

KW - Light-emitting diode

KW - MOCVD

KW - Ultraviolet

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DO - 10.1117/12.597078

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VL - 5732

SP - 197

EP - 204

JO - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

JF - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

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T2 - Quantum Sensing and Nanophotonic Devices II

Y2 - 23 January 2005 through 27 January 2005

ER -

AlGaN-based deep UV light emitting diodes with peak emission below 255 nm

Abstract

Keywords

ASJC Scopus subject areas

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