Abstract
Hitherto, the semiconductor ultraviolet (UV) detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to anew generation of UV detectors fabricated from wide-band-gap semiconductors between them the most promising are diamond and AlGaN. The latest progress in development of AlGaN UV detectors is described in detail.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | Gail J. Brown, Manijeh Razeghi |
| Publisher | Society of Photo-Optical Instrumentation Engineers |
| Pages | 275-286 |
| Number of pages | 12 |
| Volume | 2999 |
| ISBN (Print) | 0819424102 |
| State | Published - Dec 1 1997 |
| Event | Photodetectors: Materials and Devices II - San Jose, CA, USA Duration: Feb 12 1997 → Feb 14 1997 |
Other
| Other | Photodetectors: Materials and Devices II |
|---|---|
| City | San Jose, CA, USA |
| Period | 2/12/97 → 2/14/97 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics