AlGaN ultraviolet detectors

Manijeh Razeghi*, Antoni Rogalski

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

Hitherto, the semiconductor ultraviolet (UV) detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to anew generation of UV detectors fabricated from wide-band-gap semiconductors between them the most promising are diamond and AlGaN. The latest progress in development of AlGaN UV detectors is described in detail.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsGail J. Brown, Manijeh Razeghi
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages275-286
Number of pages12
Volume2999
ISBN (Print)0819424102
StatePublished - Dec 1 1997
EventPhotodetectors: Materials and Devices II - San Jose, CA, USA
Duration: Feb 12 1997Feb 14 1997

Other

OtherPhotodetectors: Materials and Devices II
CitySan Jose, CA, USA
Period2/12/972/14/97

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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  • Cite this

    Razeghi, M., & Rogalski, A. (1997). AlGaN ultraviolet detectors. In G. J. Brown, & M. Razeghi (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2999, pp. 275-286). Society of Photo-Optical Instrumentation Engineers.