AlGaN ultraviolet photoconductors grown on sapphire

D. Walker; X. Zhang; P. Kung; A. Saxler; S. Javadpour; J. Xu; M. Razeghi

doi:10.1063/1.115597

AlGaN ultraviolet photoconductors grown on sapphire

D. Walker^*, X. Zhang, P. Kung, A. Saxler, S. Javadpour, J. Xu, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

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201 Scopus citations

Abstract

AlxGa1-xN (0≤x≤0.50) ultraviolet photoconductors with a minimum cutoff wavelength shorter than 260 nm have been fabricated and characterized. The AlGaN active layers were grown on (00ṡ1) sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The spectral responsivity of the GaN detector at 360 nm is about 1 A/W biased at 8 V at room temperature. The carrier lifetime derived from the voltage-dependent responsivity is 0.13-0.36 ms.

Original language	English (US)
Pages (from-to)	2100-2101
Number of pages	2
Journal	Applied Physics Letters
Volume	68
Issue number	15
DOIs	https://doi.org/10.1063/1.115597
State	Published - 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "AlGaN ultraviolet photoconductors grown on sapphire",

abstract = "AlxGa1-xN (0≤x≤0.50) ultraviolet photoconductors with a minimum cutoff wavelength shorter than 260 nm have been fabricated and characterized. The AlGaN active layers were grown on (00ṡ1) sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The spectral responsivity of the GaN detector at 360 nm is about 1 A/W biased at 8 V at room temperature. The carrier lifetime derived from the voltage-dependent responsivity is 0.13-0.36 ms.",

author = "D. Walker and X. Zhang and P. Kung and A. Saxler and S. Javadpour and J. Xu and M. Razeghi",

year = "1996",

doi = "10.1063/1.115597",

language = "English (US)",

volume = "68",

pages = "2100--2101",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - AlGaN ultraviolet photoconductors grown on sapphire

AU - Walker, D.

AU - Zhang, X.

AU - Kung, P.

AU - Saxler, A.

AU - Javadpour, S.

AU - Xu, J.

AU - Razeghi, M.

PY - 1996

Y1 - 1996

N2 - AlxGa1-xN (0≤x≤0.50) ultraviolet photoconductors with a minimum cutoff wavelength shorter than 260 nm have been fabricated and characterized. The AlGaN active layers were grown on (00ṡ1) sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The spectral responsivity of the GaN detector at 360 nm is about 1 A/W biased at 8 V at room temperature. The carrier lifetime derived from the voltage-dependent responsivity is 0.13-0.36 ms.

AB - AlxGa1-xN (0≤x≤0.50) ultraviolet photoconductors with a minimum cutoff wavelength shorter than 260 nm have been fabricated and characterized. The AlGaN active layers were grown on (00ṡ1) sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The spectral responsivity of the GaN detector at 360 nm is about 1 A/W biased at 8 V at room temperature. The carrier lifetime derived from the voltage-dependent responsivity is 0.13-0.36 ms.

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DO - 10.1063/1.115597

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

AlGaN ultraviolet photoconductors grown on sapphire

Abstract

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