AlGaN ultraviolet photoconductors grown on sapphire

D. Walker*, X. Zhang, P. Kung, A. Saxler, S. Javadpour, J. Xu, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

157 Scopus citations

Abstract

AlxGa1-xN (0≤x≤0.50) ultraviolet photoconductors with a minimum cutoff wavelength shorter than 260 nm have been fabricated and characterized. The AlGaN active layers were grown on (00ṡ1) sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The spectral responsivity of the GaN detector at 360 nm is about 1 A/W biased at 8 V at room temperature. The carrier lifetime derived from the voltage-dependent responsivity is 0.13-0.36 ms.

Original languageEnglish (US)
Pages (from-to)2100-2101
Number of pages2
JournalApplied Physics Letters
Volume68
Issue number15
DOIs
StatePublished - Dec 1 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Walker, D., Zhang, X., Kung, P., Saxler, A., Javadpour, S., Xu, J., & Razeghi, M. (1996). AlGaN ultraviolet photoconductors grown on sapphire. Applied Physics Letters, 68(15), 2100-2101. https://doi.org/10.1063/1.115597