AlGaN/AlN MOVPE heteroepitaxy: Pulsed co-doping SiH4 and TMIn

Ilkay Demir; Yusuf Koçak; A. Emre Kasapoǧlu; Manijeh Razeghi; Emre Gür; Sezai Elagoz

doi:10.1088/1361-6641/ab2782

AlGaN/AlN MOVPE heteroepitaxy: Pulsed co-doping SiH₄ and TMIn

Ilkay Demir, Yusuf Koçak, A. Emre Kasapoǧlu, Manijeh Razeghi, Emre Gür, Sezai Elagoz

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report a new growth approach pulsed co-doping growth of Al_xGa_1-xN (x > 0.5) epilayers on AlN/Al₂O₃ templates by metal organic vapor phase epitaxy (MOVPE). Using this approach SiH₄ (silane) and TMIn (trimethylindium) supplied to the growth chamber alternately and pulsed during the growth of AlGaN epilayers. Structural and morphological quality of AlGaN epilayers were investigated by high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) techniques. It has shown that higher crystalline quality with low full width at half maximum (FWHM) and smoother surface morphology with reduced hexagonal hillock density has been obtained by the pulsed co-doping growth approach. Volcano like hillock structures has been confirmed by Raman mapping.

Original language	English (US)
Article number	075028
Journal	Semiconductor Science and Technology
Volume	34
Issue number	7
DOIs	https://doi.org/10.1088/1361-6641/ab2782
State	Published - Jun 24 2019

Funding

The authors acknowledge the usage of Nanophotonics Research and Application Center at Sivas Cumhuriyet University (CUNAM) facilities. This work is supported by the TUBITAK under project number 117F339.

Keywords

AFM
AlGaN
SEM
hillock
metal organic vapor phase epitaxy
overgrown

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1088/1361-6641/ab2782

Cite this

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title = "AlGaN/AlN MOVPE heteroepitaxy: Pulsed co-doping SiH4 and TMIn",

abstract = "We report a new growth approach pulsed co-doping growth of AlxGa1-xN (x > 0.5) epilayers on AlN/Al2O3 templates by metal organic vapor phase epitaxy (MOVPE). Using this approach SiH4 (silane) and TMIn (trimethylindium) supplied to the growth chamber alternately and pulsed during the growth of AlGaN epilayers. Structural and morphological quality of AlGaN epilayers were investigated by high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) techniques. It has shown that higher crystalline quality with low full width at half maximum (FWHM) and smoother surface morphology with reduced hexagonal hillock density has been obtained by the pulsed co-doping growth approach. Volcano like hillock structures has been confirmed by Raman mapping.",

keywords = "AFM, AlGaN, SEM, hillock, metal organic vapor phase epitaxy, overgrown",

author = "Ilkay Demir and Yusuf Ko{\c c}ak and Kasapoǧlu, {A. Emre} and Manijeh Razeghi and Emre G{\"u}r and Sezai Elagoz",

note = "Publisher Copyright: {\textcopyright} 2019 IOP Publishing Ltd.",

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T1 - AlGaN/AlN MOVPE heteroepitaxy

T2 - Pulsed co-doping SiH4 and TMIn

AU - Demir, Ilkay

AU - Koçak, Yusuf

AU - Kasapoǧlu, A. Emre

AU - Razeghi, Manijeh

AU - Gür, Emre

AU - Elagoz, Sezai

PY - 2019/6/24

Y1 - 2019/6/24

N2 - We report a new growth approach pulsed co-doping growth of AlxGa1-xN (x > 0.5) epilayers on AlN/Al2O3 templates by metal organic vapor phase epitaxy (MOVPE). Using this approach SiH4 (silane) and TMIn (trimethylindium) supplied to the growth chamber alternately and pulsed during the growth of AlGaN epilayers. Structural and morphological quality of AlGaN epilayers were investigated by high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) techniques. It has shown that higher crystalline quality with low full width at half maximum (FWHM) and smoother surface morphology with reduced hexagonal hillock density has been obtained by the pulsed co-doping growth approach. Volcano like hillock structures has been confirmed by Raman mapping.

AB - We report a new growth approach pulsed co-doping growth of AlxGa1-xN (x > 0.5) epilayers on AlN/Al2O3 templates by metal organic vapor phase epitaxy (MOVPE). Using this approach SiH4 (silane) and TMIn (trimethylindium) supplied to the growth chamber alternately and pulsed during the growth of AlGaN epilayers. Structural and morphological quality of AlGaN epilayers were investigated by high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) techniques. It has shown that higher crystalline quality with low full width at half maximum (FWHM) and smoother surface morphology with reduced hexagonal hillock density has been obtained by the pulsed co-doping growth approach. Volcano like hillock structures has been confirmed by Raman mapping.

KW - AFM

KW - AlGaN

KW - SEM

KW - hillock

KW - metal organic vapor phase epitaxy

KW - overgrown

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