AlGaN/AlN MOVPE heteroepitaxy: Pulsed co-doping SiH4 and TMIn

Ilkay Demir, Yusuf Koçak, A. Emre Kasapoǧlu, Manijeh Razeghi, Emre Gür, Sezai Elagoz

Research output: Contribution to journalArticle

Abstract

We report a new growth approach pulsed co-doping growth of AlxGa1-xN (x > 0.5) epilayers on AlN/Al2O3 templates by metal organic vapor phase epitaxy (MOVPE). Using this approach SiH4 (silane) and TMIn (trimethylindium) supplied to the growth chamber alternately and pulsed during the growth of AlGaN epilayers. Structural and morphological quality of AlGaN epilayers were investigated by high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) techniques. It has shown that higher crystalline quality with low full width at half maximum (FWHM) and smoother surface morphology with reduced hexagonal hillock density has been obtained by the pulsed co-doping growth approach. Volcano like hillock structures has been confirmed by Raman mapping.

Original languageEnglish (US)
Article number075028
JournalSemiconductor Science and Technology
Volume34
Issue number7
DOIs
StatePublished - Jun 24 2019

Fingerprint

Vapor phase epitaxy
Epitaxial growth
vapor phase epitaxy
Metals
Doping (additives)
Epilayers
metals
phytotrons
Silanes
Volcanoes
silanes
volcanoes
Full width at half maximum
templates
Raman spectroscopy
atomic force microscopy
Surface morphology
Atomic force microscopy
scanning electron microscopy
aluminum gallium nitride

Keywords

  • AFM
  • AlGaN
  • SEM
  • hillock
  • metal organic vapor phase epitaxy
  • overgrown

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Demir, Ilkay ; Koçak, Yusuf ; Kasapoǧlu, A. Emre ; Razeghi, Manijeh ; Gür, Emre ; Elagoz, Sezai. / AlGaN/AlN MOVPE heteroepitaxy : Pulsed co-doping SiH4 and TMIn. In: Semiconductor Science and Technology. 2019 ; Vol. 34, No. 7.
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AlGaN/AlN MOVPE heteroepitaxy : Pulsed co-doping SiH4 and TMIn. / Demir, Ilkay; Koçak, Yusuf; Kasapoǧlu, A. Emre; Razeghi, Manijeh; Gür, Emre; Elagoz, Sezai.

In: Semiconductor Science and Technology, Vol. 34, No. 7, 075028, 24.06.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - AlGaN/AlN MOVPE heteroepitaxy

T2 - Pulsed co-doping SiH4 and TMIn

AU - Demir, Ilkay

AU - Koçak, Yusuf

AU - Kasapoǧlu, A. Emre

AU - Razeghi, Manijeh

AU - Gür, Emre

AU - Elagoz, Sezai

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AB - We report a new growth approach pulsed co-doping growth of AlxGa1-xN (x > 0.5) epilayers on AlN/Al2O3 templates by metal organic vapor phase epitaxy (MOVPE). Using this approach SiH4 (silane) and TMIn (trimethylindium) supplied to the growth chamber alternately and pulsed during the growth of AlGaN epilayers. Structural and morphological quality of AlGaN epilayers were investigated by high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) techniques. It has shown that higher crystalline quality with low full width at half maximum (FWHM) and smoother surface morphology with reduced hexagonal hillock density has been obtained by the pulsed co-doping growth approach. Volcano like hillock structures has been confirmed by Raman mapping.

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KW - AlGaN

KW - SEM

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KW - metal organic vapor phase epitaxy

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