AlGaN/AlN MOVPE heteroepitaxy: Pulsed co-doping SiH4 and TMIn

Ilkay Demir, Yusuf Koçak, A. Emre Kasapoǧlu, Manijeh Razeghi, Emre Gür, Sezai Elagoz

Research output: Contribution to journalArticlepeer-review

Abstract

We report a new growth approach pulsed co-doping growth of AlxGa1-xN (x > 0.5) epilayers on AlN/Al2O3 templates by metal organic vapor phase epitaxy (MOVPE). Using this approach SiH4 (silane) and TMIn (trimethylindium) supplied to the growth chamber alternately and pulsed during the growth of AlGaN epilayers. Structural and morphological quality of AlGaN epilayers were investigated by high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) techniques. It has shown that higher crystalline quality with low full width at half maximum (FWHM) and smoother surface morphology with reduced hexagonal hillock density has been obtained by the pulsed co-doping growth approach. Volcano like hillock structures has been confirmed by Raman mapping.

Original languageEnglish (US)
Article number075028
JournalSemiconductor Science and Technology
Volume34
Issue number7
DOIs
StatePublished - Jun 24 2019

Keywords

  • AFM
  • AlGaN
  • SEM
  • hillock
  • metal organic vapor phase epitaxy
  • overgrown

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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