AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition

C. Bayram; Z. Vashaei; M. Razeghi

doi:10.1063/1.3294633

AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition

C. Bayram^*, Z. Vashaei, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

86 Scopus citations

Abstract

AlN/GaN double-barrier resonant tunneling diodes (RTDs) were grown by metal-organic chemical vapor deposition on sapphire. RTDs were fabricated via standard processing steps. RTDs demonstrate a clear negative differential resistance (NDR) at room temperature (RT). The NDR was observed around 4.7 V with a peak current density of 59 kA/ cm² and a peak-to-valley ratio of 1.6 at RT. Dislocation-free material is shown to be the key for the performance of GaN RTDs.

Original language	English (US)
Article number	042103
Journal	Applied Physics Letters
Volume	96
Issue number	4
DOIs	https://doi.org/10.1063/1.3294633
State	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{1212a9bb803740d3915a9855b2788848,

title = "AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition",

abstract = "AlN/GaN double-barrier resonant tunneling diodes (RTDs) were grown by metal-organic chemical vapor deposition on sapphire. RTDs were fabricated via standard processing steps. RTDs demonstrate a clear negative differential resistance (NDR) at room temperature (RT). The NDR was observed around 4.7 V with a peak current density of 59 kA/ cm2 and a peak-to-valley ratio of 1.6 at RT. Dislocation-free material is shown to be the key for the performance of GaN RTDs.",

author = "C. Bayram and Z. Vashaei and M. Razeghi",

year = "2010",

doi = "10.1063/1.3294633",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition

AU - Bayram, C.

AU - Vashaei, Z.

AU - Razeghi, M.

PY - 2010

Y1 - 2010

N2 - AlN/GaN double-barrier resonant tunneling diodes (RTDs) were grown by metal-organic chemical vapor deposition on sapphire. RTDs were fabricated via standard processing steps. RTDs demonstrate a clear negative differential resistance (NDR) at room temperature (RT). The NDR was observed around 4.7 V with a peak current density of 59 kA/ cm2 and a peak-to-valley ratio of 1.6 at RT. Dislocation-free material is shown to be the key for the performance of GaN RTDs.

AB - AlN/GaN double-barrier resonant tunneling diodes (RTDs) were grown by metal-organic chemical vapor deposition on sapphire. RTDs were fabricated via standard processing steps. RTDs demonstrate a clear negative differential resistance (NDR) at room temperature (RT). The NDR was observed around 4.7 V with a peak current density of 59 kA/ cm2 and a peak-to-valley ratio of 1.6 at RT. Dislocation-free material is shown to be the key for the performance of GaN RTDs.

UR - http://www.scopus.com/inward/record.url?scp=75749106310&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=75749106310&partnerID=8YFLogxK

U2 - 10.1063/1.3294633

DO - 10.1063/1.3294633

M3 - Article

AN - SCOPUS:75749106310

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042103

ER -

AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition

Abstract

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