AlxGa1-xN (0≤x≤1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition

D. Walker; X. Zhang; A. Saxler; P. Kung; J. Xu; M. Razeghi

doi:10.1063/1.118450

Al_xGa_1-xN (0≤x≤1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition

D. Walker^*, X. Zhang, A. Saxler, P. Kung, J. Xu, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

135 Scopus citations

Abstract

Al_xGa_1-xN (0≤x≤1) ultraviolet photoconductors with cutoff wavelengths from 365 to 200 nm have been fabricated and characterized. The maximum detectivity reached 5.5×10⁸ cmHz^l/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in Al_xGa_1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 ms. The frequency-dependent noise spectrum shows that it is dominated by Johnson noise at high frequencies for low-Al-composition samples.

Original language	English (US)
Pages (from-to)	949-951
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	8
DOIs	https://doi.org/10.1063/1.118450
State	Published - Feb 24 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "AlxGa1-xN (0≤x≤1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition",

abstract = "AlxGa1-xN (0≤x≤1) ultraviolet photoconductors with cutoff wavelengths from 365 to 200 nm have been fabricated and characterized. The maximum detectivity reached 5.5×108 cmHzl/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in AlxGa1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 ms. The frequency-dependent noise spectrum shows that it is dominated by Johnson noise at high frequencies for low-Al-composition samples.",

author = "D. Walker and X. Zhang and A. Saxler and P. Kung and J. Xu and M. Razeghi",

year = "1997",

month = feb,

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doi = "10.1063/1.118450",

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T1 - AlxGa1-xN (0≤x≤1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition

AU - Walker, D.

AU - Zhang, X.

AU - Saxler, A.

AU - Kung, P.

AU - Xu, J.

AU - Razeghi, M.

PY - 1997/2/24

Y1 - 1997/2/24

N2 - AlxGa1-xN (0≤x≤1) ultraviolet photoconductors with cutoff wavelengths from 365 to 200 nm have been fabricated and characterized. The maximum detectivity reached 5.5×108 cmHzl/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in AlxGa1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 ms. The frequency-dependent noise spectrum shows that it is dominated by Johnson noise at high frequencies for low-Al-composition samples.

AB - AlxGa1-xN (0≤x≤1) ultraviolet photoconductors with cutoff wavelengths from 365 to 200 nm have been fabricated and characterized. The maximum detectivity reached 5.5×108 cmHzl/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in AlxGa1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 ms. The frequency-dependent noise spectrum shows that it is dominated by Johnson noise at high frequencies for low-Al-composition samples.

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Al_xGa_1-xN (0≤x≤1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition

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