AlxGa1-xN (0≤x≤1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition

D. Walker*, X. Zhang, A. Saxler, P. Kung, J. Xu, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

130 Scopus citations

Abstract

AlxGa1-xN (0≤x≤1) ultraviolet photoconductors with cutoff wavelengths from 365 to 200 nm have been fabricated and characterized. The maximum detectivity reached 5.5×108 cmHzl/2/W at a modulating frequency of 14 Hz. The effective majority carrier lifetime in AlxGa1-xN materials, derived from frequency-dependent photoconductivity measurements, has been estimated to be from 6 to 35 ms. The frequency-dependent noise spectrum shows that it is dominated by Johnson noise at high frequencies for low-Al-composition samples.

Original languageEnglish (US)
Pages (from-to)949-951
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number8
DOIs
StatePublished - Feb 24 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Al<sub>x</sub>Ga<sub>1-x</sub>N (0≤x≤1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition'. Together they form a unique fingerprint.

  • Cite this