AlxGa1-xN-based materials and heterostructures

P. Kung; A. Saxler; D. Walker; X. Zhang; R. Lavado; K. S. Kim; M. Razeghi

Al_xGa_1-xN-based materials and heterostructures

P. Kung^*, A. Saxler, D. Walker, X. Zhang, R. Lavado, K. S. Kim, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

17 Scopus citations

Abstract

We present the metallorganic chemical vapor deposition growth, n-type and p-type doping and characterization of Al_xGa_1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using Al_xGa_1-xN high quality films. We report the structural characterization of the Al_xGa_1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 10⁷ cm^-2 was estimated in Al_xGa_1-xN / GaN structures. The realization of Al_xGa_1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

Original language	English (US)
Pages (from-to)	79-84
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	449
State	Published - 1997
Event	Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "AlxGa1-xN-based materials and heterostructures",

abstract = "We present the metallorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.",

author = "P. Kung and A. Saxler and D. Walker and X. Zhang and R. Lavado and Kim, {K. S.} and M. Razeghi",

year = "1997",

language = "English (US)",

volume = "449",

pages = "79--84",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

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TY - JOUR

T1 - AlxGa1-xN-based materials and heterostructures

AU - Kung, P.

AU - Saxler, A.

AU - Walker, D.

AU - Zhang, X.

AU - Lavado, R.

AU - Kim, K. S.

AU - Razeghi, M.

PY - 1997

Y1 - 1997

N2 - We present the metallorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

AB - We present the metallorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

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M3 - Conference article

AN - SCOPUS:0030645940

VL - 449

SP - 79

EP - 84

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Proceedings of the 1996 MRS Fall Symposium

Y2 - 2 December 1996 through 6 December 1996

ER -