AlxGa1-xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

E. Cicek, Ryan P McClintock, C. Y. Cho, B. Rahnema, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

We report on AlxGa1-xN-based solar-blind ultraviolet (UV) photodetector (PD) grown on Si(111) substrate. First, Si(111) substrate is patterned, and then metalorganic chemical vapor deposition is implemented for a fully-coalesced ∼8.5 μm AlN template layer via a pulsed atomic layer epitaxial growth technique. A back-illuminated p-i-n PD structure is subsequently grown on the high quality AlN template layer. After processing and implementation of Si(111) substrate removal, the optical and electrical characteristic of PDs are studied. Solar-blind operation is observed throughout the array; at the peak detection wavelength of 290 nm, 625 μm2 area PD showed unbiased peak external quantum efficiency and responsivity of ∼7% and 18.3 mA/W, respectively, with a UV and visible rejection ratio of more than three orders of magnitude. Electrical measurements yielded a low-dark current density below 1.6 × 10-8 A/cm2 at 10 V reverse bias.

Original languageEnglish (US)
Article number181113
JournalApplied Physics Letters
Volume103
Issue number18
DOIs
StatePublished - Oct 28 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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