Abstract
We report on AlxGa1-xN-based solar-blind ultraviolet (UV) photodetector (PD) grown on Si(111) substrate. First, Si(111) substrate is patterned, and then metalorganic chemical vapor deposition is implemented for a fully-coalesced ∼8.5 μm AlN template layer via a pulsed atomic layer epitaxial growth technique. A back-illuminated p-i-n PD structure is subsequently grown on the high quality AlN template layer. After processing and implementation of Si(111) substrate removal, the optical and electrical characteristic of PDs are studied. Solar-blind operation is observed throughout the array; at the peak detection wavelength of 290 nm, 625 μm2 area PD showed unbiased peak external quantum efficiency and responsivity of ∼7% and 18.3 mA/W, respectively, with a UV and visible rejection ratio of more than three orders of magnitude. Electrical measurements yielded a low-dark current density below 1.6 × 10-8 A/cm2 at 10 V reverse bias.
Original language | English (US) |
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Article number | 181113 |
Journal | Applied Physics Letters |
Volume | 103 |
Issue number | 18 |
DOIs | |
State | Published - Oct 28 2013 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)