Keyphrases
Si Substrate
100%
Lateralized Overgrowth
100%
AlxGa1-xN
100%
Si(111) Substrate
100%
Solar-blind Ultraviolet Photodetectors
100%
AlN on Si
100%
Template Layer
66%
AlN Template
66%
Order of Magnitude
33%
Optical Characteristics
33%
Atomic Layers
33%
Three-order
33%
Electrical Measurements
33%
Epitaxial Growth
33%
Low Dark Current
33%
Metal-organic Chemical Vapor Deposition (MOCVD)
33%
Photodetector
33%
External Quantum Efficiency
33%
Growth Techniques
33%
Responsivity
33%
Dark Current Density
33%
Solar-blind
33%
Reverse Bias
33%
Peak Detection
33%
Detection Wavelength
33%
Electrical Characteristics
33%
Substrate Removal
33%
Back-illuminated
33%
Rejection Ratio
33%
P-i-n Photodetector
33%
Engineering
Photodetector
100%
Si Substrate
100%
Atomic Layer
25%
Responsivity
25%
Reverse Bias
25%
External Quantum Efficiency
25%
Chemical Vapor Deposition
25%
Vapor Deposition
25%
Electrical Measurement
25%
Material Science
Aluminum Nitride
100%
Epitaxy
33%
Chemical Vapor Deposition
33%
Density
33%
Electrical Property
33%
Chemical Engineering
Epitaxial Growth
100%
Metallorganic Chemical Vapor Deposition
100%
Physics
Dark Current
100%
Metalorganic Chemical Vapor Deposition
100%