Al_xGa_1-xN p-i-n photodiodes on sapphire substrates

Keyphrases

• PIN Photodiode 100%
• Sapphire Substrate 100%
• AlxGa1-xN 100%
• Load Resistance 66%
• Order of Magnitude 33%
• Sapphire 33%
• Low Pressure 33%
• High Mass Loading 33%
• Metal-organic Chemical Vapor Deposition (MOCVD) 33%
• About Four 33%
• Transient Response 33%
• Responsivity 33%
• Cutoff Wavelength 33%
• Capacitance Measurement 33%
• Photocurrent Decay 33%
• Donor Concentration 33%
• Decay Time 33%
• Five Decades 33%
• Intrinsic Region 33%
• Low Load 33%
• RC Constant 33%
• Acceptor Concentration 33%
• Optical Power Density 33%

Engineering

• Sapphire Substrate 100%
• Photodiode 100%
• Load Resistance 100%
• Photocurrent 50%
• Power Density 50%
• Decay Time 50%
• Constant Time 50%
• Cutoff Wavelength 50%
• Responsivity 50%
• Transient Analysis 50%
• Optical Power 50%
• Chemical Vapor Deposition 50%
• Vapor Deposition 50%
• Capacitance Measurement 50%

Material Science

• Sapphire 100%
• Chemical Vapor Deposition 50%
• Optical Power 50%
• Density 50%
• Capacitance Measurement 50%