AlxGa1?xN-based deep-ultraviolet 320×256 focal plane array

Erdem Cicek, Zahra Vashaei, Edward Kwei Wei Huang, Ryan P McClintock, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

We report the synthesis, fabrication, and testing of a 320 × 256 focal plane array (FPA) of back-illuminated, solarblind, p-i-n, Al xGa1?xN-based detectors, fully realized within our research laboratory. We implemented a pulse atomic layer deposition technique for the metalorganic chemical vapor deposition growth of thick, high-quality, crack-free, high Al composition AlxGa1?xN layers. The FPA is hybridized to a matching ISC 9809 readout integrated circuit and operated in a SE-IR camera system. Solar-blind operation is observed throughout the array with peak detection occurring at wavelengths of 256 nm and lower, and falling off three orders of magnitude by ∼285 nm. By developing an opaque masking technology, the visible response of the ROIC is significantly reduced; thus the need for external filtering to achieve solar- and visible-blind operation is eliminated. This allows the FPA to achieve high external quantum efficiency (EQE); at 254 nm, average pixels showed unbiased peak responsivity of 75 mA?W, which corresponds to an EQE of ∼37%. Finally, the uniformity of the FPA and imaging properties are investigated.

Original languageEnglish (US)
Pages (from-to)896-898
Number of pages3
JournalOptics Letters
Volume37
Issue number5
DOIs
StatePublished - Mar 1 2012

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Al<sub>x</sub>Ga<sub>1?x</sub>N-based deep-ultraviolet 320×256 focal plane array'. Together they form a unique fingerprint.

  • Cite this