AlxGayIn1-x-yAs/InP-based quantum well infrared photodetectors

C. Jelen*, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In order to tune the wavelength of a lattice-matched quantum well infrared photodetector (QWIP) over the range 3-20 μm, new designs are demonstrated for the first time which utilise AlxGayIn1-x-yAs layers lattice-matched to InP and grown by gas-source molecular beam epitaxy. We demonstrate 8, 13, and 18-μm QWIPs using the lattice-matched n-doped (AlxGa1-x)0.48In0.52As /InP system. We also review QWIP structures of Ga0.47In0.53As/Al0.48In0.52As grown on InP substrate with peak photoresponse at 4 μm. Combining these two materials, we report the first multicolour detectors that combine lattice-matched quantum wells of Ga0.47In0.53As/ Al0.48In0.52As and Ga0.47In0.53As/InP. Utilising two contacts, a voltage tunable, lattice-matched, two colour QWIP with a peak wavelength of 8 μm at a bias of V = 5 V and a peak wavelength of 4 μm at V = 10 V is demonstrated. Using the measured noise data for Ga0.47In0.53As/InP detectors, we have calculated the thermal generation rate, bias-dependent gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate (∼7 × 1022 cm-3s-1) is similar to AlxGa1-xAs/GaAs QWIPs with similar peak wavelengths, but the gain is 50 times larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers.

Original languageEnglish (US)
Pages (from-to)1-17
Number of pages17
JournalOpto-electronics Review
Volume7
Issue number1
StatePublished - Jan 1 1999

Keywords

  • AlGaInAs/InP QWIPs
  • Infrared photodetectors
  • Multicolour detectors

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Electrical and Electronic Engineering

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