Alternative catalysts for VSS growth of silicon and germanium nanowires

Jessica L. Lensch-Falk, Eric R. Hemesath, Daniel E. Perea, Lincoln James Lauhon

Research output: Contribution to journalArticle

121 Scopus citations

Abstract

Metal impurities have been used to mediate the growth of anisotropic crystalline semiconductor nanowires for a variety of applications. A majority of efforts have employed the vapor-liquid-solid approach at growth temperatures above the metal-semiconductor eutectic. Sub-eutectic vapor-solid-solid (VSS) growth has received less attention but may provide advantages including reduced processing temperatures and more abrupt heterojunctions. We present a review of the VSS growth of Si and Ge nanowires together with new studies of Mn-mediated Ge and Si nanowires to assess the generality of sub-eutectic nanowire growth and highlight key requirements.

Original languageEnglish (US)
Pages (from-to)849-857
Number of pages9
JournalJournal of Materials Chemistry
Volume19
Issue number7
DOIs
StatePublished - Feb 9 2009

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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