Aluminum free GalnP/GaAs quantum well infrared photodetectors for long wavelength detection

C. Jelen*, Steven Boyd Slivken, J. Hoff, Manijeh Razeghi, G. J. Brown

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We demonstrate quantum well infrared photodetectors based on a GaAs/Ga 0.51 In 0.49 P superlattice structure grown by gas-source molecular beam epitaxy. Wafers were grown with varying well widths. Wells of 40, 65, and 75 Å resulted in peak detection wavelengths of 10.4, 12.8, and 13.3 μm with a cutoff wavelength of 13.5, 15, and 15.5 μm, respectively. The measured peak and cutoff wavelengths match those predicted by eight band theoretical analysis. Measured dark currents were lower than equivalent GaAs/AlGaAs samples.

Original languageEnglish (US)
Pages (from-to)360-362
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number3
DOIs
StatePublished - Jan 20 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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