@inproceedings{53778e7a0fc14c00b319eb3c08ed3ccc,
title = "Aluminum-free quantum well intersubband photodetectors with p-type GaAs wells and lattice-matched ternary and quaternary barriers",
abstract = "Acceptor doped Quantum Well Intersubband Photodetectors with GaAs wells and lattice matched barriers of both ternary (In 0.49Ga0.51P) and quaternary (In0.62Ga0.38As 0.22P0.78) materials have been grown on semi-insulating GaAs substrates by Low Pressure Metal Organic Chemical Vapor Deposition. Mesa devices were fabricated and subjected to a series of tests to illuminate experimentally some of the detection capabilities of the lattice matched quaternary In xGa1-xAsyP1-y system with (0 ≤ x ≤ 0.52) and (0 ≤ y ≤ 1). The observed photoresponse cut-off wavelengths are in good agreement with the activation energies observed in the temperature dependence of the dark currents. Kronig-Penney calculations were used to model the intersubband transition energies.",
author = "Jim Hoff and Erwan Bigan and Brown, {Gail J.} and Manijeh Razeghi",
year = "1995",
doi = "10.1117/12.206893",
language = "English (US)",
isbn = "0819417440",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",
pages = "445--454",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Optoelectronic Integrated Circuit Materials, Physics, and Devices ; Conference date: 06-02-1995 Through 09-02-1995",
}