Aluminum-free quantum well intersubband photodetectors with p-type GaAs wells and lattice-matched ternary and quaternary barriers

Jim Hoff*, Erwan Bigan, Gail J. Brown, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Acceptor doped Quantum Well Intersubband Photodetectors with GaAs wells and lattice matched barriers of both ternary (In 0.49Ga0.51P) and quaternary (In0.62Ga0.38As 0.22P0.78) materials have been grown on semi-insulating GaAs substrates by Low Pressure Metal Organic Chemical Vapor Deposition. Mesa devices were fabricated and subjected to a series of tests to illuminate experimentally some of the detection capabilities of the lattice matched quaternary In xGa1-xAsyP1-y system with (0 ≤ x ≤ 0.52) and (0 ≤ y ≤ 1). The observed photoresponse cut-off wavelengths are in good agreement with the activation energies observed in the temperature dependence of the dark currents. Kronig-Penney calculations were used to model the intersubband transition energies.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages445-454
Number of pages10
ISBN (Print)0819417440, 9780819417442
DOIs
StatePublished - 1995
EventOptoelectronic Integrated Circuit Materials, Physics, and Devices - San Jose, CA, USA
Duration: Feb 6 1995Feb 9 1995

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2397
ISSN (Print)0277-786X

Other

OtherOptoelectronic Integrated Circuit Materials, Physics, and Devices
CitySan Jose, CA, USA
Period2/6/952/9/95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Aluminum-free quantum well intersubband photodetectors with p-type GaAs wells and lattice-matched ternary and quaternary barriers'. Together they form a unique fingerprint.

  • Cite this

    Hoff, J., Bigan, E., Brown, G. J., & Razeghi, M. (1995). Aluminum-free quantum well intersubband photodetectors with p-type GaAs wells and lattice-matched ternary and quaternary barriers. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 445-454). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2397). Society of Photo-Optical Instrumentation Engineers. https://doi.org/10.1117/12.206893