Aluminum gallium nitride short-period superlattices doped with magnesium

A. Saxler*, W. C. Mitchel, P. Kung, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

59 Scopus citations

Abstract

Low-pressure organometallic vapor phase epitaxy was used to grow short-period superlattices (SPSL) consisting of alternating layers of GaN:Mg and AlGaN:Mg. The use of the SPSLs allowed a shift to shorter wavelengths in the optical absorption edge while lowering the acceptor ionization energy. Most of the wavelength shift in the SPSL is due to energy shift conduction band.

Original languageEnglish (US)
Pages (from-to)2023-2025
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number14
DOIs
StatePublished - Apr 5 1999

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Aluminum gallium nitride short-period superlattices doped with magnesium'. Together they form a unique fingerprint.

Cite this