Low-pressure organometallic vapor phase epitaxy was used to grow short-period superlattices (SPSL) consisting of alternating layers of GaN:Mg and AlGaN:Mg. The use of the SPSLs allowed a shift to shorter wavelengths in the optical absorption edge while lowering the acceptor ionization energy. Most of the wavelength shift in the SPSL is due to energy shift conduction band.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Apr 5 1999|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)