Aluminum gallium nitride short-period superlattices doped with magnesium

A. Saxler; W. C. Mitchel; P. Kung; M. Razeghi

doi:10.1063/1.123744

Aluminum gallium nitride short-period superlattices doped with magnesium

A. Saxler^*, W. C. Mitchel, P. Kung, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Low-pressure organometallic vapor phase epitaxy was used to grow short-period superlattices (SPSL) consisting of alternating layers of GaN:Mg and AlGaN:Mg. The use of the SPSLs allowed a shift to shorter wavelengths in the optical absorption edge while lowering the acceptor ionization energy. Most of the wavelength shift in the SPSL is due to energy shift conduction band.

Original language	English (US)
Pages (from-to)	2023-2025
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	14
DOIs	https://doi.org/10.1063/1.123744
State	Published - Apr 5 1999

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.123744

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abstract = "Low-pressure organometallic vapor phase epitaxy was used to grow short-period superlattices (SPSL) consisting of alternating layers of GaN:Mg and AlGaN:Mg. The use of the SPSLs allowed a shift to shorter wavelengths in the optical absorption edge while lowering the acceptor ionization energy. Most of the wavelength shift in the SPSL is due to energy shift conduction band.",

author = "A. Saxler and Mitchel, {W. C.} and P. Kung and M. Razeghi",

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AU - Saxler, A.

AU - Mitchel, W. C.

AU - Kung, P.

AU - Razeghi, M.

PY - 1999/4/5

Y1 - 1999/4/5

N2 - Low-pressure organometallic vapor phase epitaxy was used to grow short-period superlattices (SPSL) consisting of alternating layers of GaN:Mg and AlGaN:Mg. The use of the SPSLs allowed a shift to shorter wavelengths in the optical absorption edge while lowering the acceptor ionization energy. Most of the wavelength shift in the SPSL is due to energy shift conduction band.

AB - Low-pressure organometallic vapor phase epitaxy was used to grow short-period superlattices (SPSL) consisting of alternating layers of GaN:Mg and AlGaN:Mg. The use of the SPSLs allowed a shift to shorter wavelengths in the optical absorption edge while lowering the acceptor ionization energy. Most of the wavelength shift in the SPSL is due to energy shift conduction band.

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Aluminum gallium nitride short-period superlattices doped with magnesium

Abstract

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